We report the growth of self-assembled ErAs islands embedded in GaAs by molecular beam
epitaxy. The nucleation of ErAs on GaAs occurs in an island growth mode leading to …

Two photoconductive emitters-one with a self-complementary square spiral antenna, and
the other with a resonant slot antenna-were fabricated on a GaAs epilayer embedded with …

We revisit pump-probe transient reflectivity (PPTR) as a probe of ultrafast carrier dynamics in
photoconductive materials, using low-temperature grown GaAs (LT-GaAs) as an exemplar …

The incorporation of lanthanide pnictide nanoparticles and films into III-V matrices allows for
semiconductor composites with a wide range of potential optical, electrical, and thermal …

Picosecond photoresponse of carriers in Si ion-implanted Si samples has been measured
using femtosecond transient reflectivity measurement. A threshold peak implant dose of …

We have studied the properties of molecular beam epitaxially (MBE)-grown Erdoped III-V
semiconductors for optoelectronic applications. Optically excited Er 3+ in insulating …

The electronic properties of epitaxial semiconductors are strongly modified by the inclusion
of semi-metallic nanoparticles grown in the semiconductor. For example, epitaxial semi …

The carrier dynamics and absorption edges of InGaAsP samples grown by He-plasma-
assisted molecular beam epitaxy and doped with various concentrations of beryllium are …

Thermoelectrics are solid-state materials with the ability to directly convert heat to electricity
and visa versa. Despite their advantages in power density and reliability, state-of-the-art bulk …

We present a study of room-temperature, ultrafast photoconductivity associated with a
strong, sub-bandgap, resonant absorption around λ= 1550 nm in three MBE-grown GaAs …