High speed silicon Mach-Zehnder modulator based on interleaved PN junctions
A high speed silicon Mach-Zehnder modulator is proposed based on interleaved PN
junctions. This doping profile enabled both high modulation efficiency of V_πL_π= 1.5~ 2.0 …
junctions. This doping profile enabled both high modulation efficiency of V_πL_π= 1.5~ 2.0 …
An equivalent circuit model of the traveling wave electrode for carrier-depletion-based silicon optical modulators
H Yu, W Bogaerts - Journal of lightwave technology, 2012 - ieeexplore.ieee.org
We propose an equivalent circuit model for the coplanar waveguide (CPW) which serves as
the traveling wave electrode to drive carrier-depletion-based silicon modulators. Conformal …
the traveling wave electrode to drive carrier-depletion-based silicon modulators. Conformal …
Demonstration and characterization of high-speed silicon depletion-mode Mach–Zehnder modulators
H Xu, X Li, X Xiao, Z Li, Y Yu… - IEEE Journal of Selected …, 2013 - ieeexplore.ieee.org
High-speed silicon depletion-mode Mach-Zehnder modulators are demonstrated and
characterized in this paper. Based on the structural dimensions and material parameters …
characterized in this paper. Based on the structural dimensions and material parameters …
High bandwidth capacitance efficient silicon MOS modulator
This article analysed and optimised horizontal Silicon insulator Silicon capacitor (H-SISCAP)
phase shifter structures with insulator thickness tox up to 40 nm. The phase shifter has an …
phase shifter structures with insulator thickness tox up to 40 nm. The phase shifter has an …
CAD-oriented equivalent-circuit modeling of on-chip interconnects on lossy silicon substrate
J Zheng, YC Hahm, VK Tripathi… - IEEE Transactions on …, 2000 - ieeexplore.ieee.org
A new, comprehensive CAD-oriented modeling methodology for single and coupled
interconnects on an Si-SiO/sub 2/substrate is presented. The modeling technique uses a …
interconnects on an Si-SiO/sub 2/substrate is presented. The modeling technique uses a …
[图书][B] Networks and devices using planar transmissions lines
F Di Paolo - 2018 - taylorfrancis.com
A single text that incorporates all of the theoretical principles and practical aspects of planar
transmission line devices-since the early development of striplines, it has been sought by …
transmission line devices-since the early development of striplines, it has been sought by …
Modeling and optimization of a single-drive push–pull silicon Mach–Zehnder modulator
We present an equivalent circuit model for a silicon carrier-depletion single-drive push–pull
Mach–Zehnder modulator (MZM) with its traveling wave electrode made of coplanar strip …
Mach–Zehnder modulator (MZM) with its traveling wave electrode made of coplanar strip …
Modeling and analysis of a power distribution network in TSV-based 3-D memory IC including P/G TSVs, on-chip decoupling capacitors, and silicon substrate effects
In this paper, we propose a model for 3-D stacked on-chip power distribution networks
(PDNs) in through silicon via (TSV)-based 3-D memory ICs that includes the effects of …
(PDNs) in through silicon via (TSV)-based 3-D memory ICs that includes the effects of …
Capacitively loaded inverted CPWs for distributed TRL-based de-embedding at (sub) mm-waves
In this paper, we present a thru-reflect-line (TRL) calibration/de-embedding kit integrated in
the back-end-of-line of a SiGe technology, which allows direct calibration at the first …
the back-end-of-line of a SiGe technology, which allows direct calibration at the first …
Silicon optical interconnect device technologies for 40 Gb/s and beyond
Important active technologies, modulators, photodetectors, and thermooptics for low-energy
silicon optical interconnects are discussed. High-speed performance up to 40 Gb/s is …
silicon optical interconnects are discussed. High-speed performance up to 40 Gb/s is …