Memristive technologies for data storage, computation, encryption, and radio-frequency communication

M Lanza, A Sebastian, WD Lu, M Le Gallo, MF Chang… - Science, 2022 - science.org
Memristive devices, which combine a resistor with memory functions such that voltage
pulses can change their resistance (and hence their memory state) in a nonvolatile manner …

Spintronics for energy-efficient computing: An overview and outlook

Z Guo, J Yin, Y Bai, D Zhu, K Shi, G Wang… - Proceedings of the …, 2021 - ieeexplore.ieee.org
From the discovery of giant magnetoresistance (GMR) to tunnel magnetoresistance (TMR),
their subsequent application in large capacity hard disk drives (HDDs) greatly speeded up …

The future of ferroelectric field-effect transistor technology

AI Khan, A Keshavarzi, S Datta - Nature Electronics, 2020 - nature.com
The discovery of ferroelectricity in oxides that are compatible with modern semiconductor
manufacturing processes, such as hafnium oxide, has led to a re-emergence of the …

Recent progress of integrated circuits and optoelectronic chips

Y Hao, S Xiang, G Han, J Zhang, X Ma, Z Zhu… - Science China …, 2021 - Springer
Integrated circuits (ICs) and optoelectronic chips are the foundation stones of the modern
information society. The IC industry has been driven by the so-called “Moore's law” in the …

A full-stack view of probabilistic computing with p-bits: devices, architectures, and algorithms

S Chowdhury, A Grimaldi, NA Aadit… - IEEE Journal on …, 2023 - ieeexplore.ieee.org
The transistor celebrated its 75th birthday in 2022. The continued scaling of the transistor
defined by Moore's law continues, albeit at a slower pace. Meanwhile, computing demands …

Advances in emerging memory technologies: From data storage to artificial intelligence

G Molas, E Nowak - Applied Sciences, 2021 - mdpi.com
This paper presents an overview of emerging memory technologies. It begins with the
presentation of stand-alone and embedded memory technology evolution, since the …

Voltage-gate-assisted spin-orbit-torque magnetic random-access memory for high-density and low-power embedded applications

YC Wu, K Garello, W Kim, M Gupta, M Perumkunnil… - Physical Review …, 2021 - APS
The voltage-gate-assisted spin-orbit-torque (VGSOT) writing scheme combines the
advantages from voltage control of magnetic anisotropy (VCMA) and spin-orbit-torque (SOT) …

CMOS plus stochastic nanomagnets enabling heterogeneous computers for probabilistic inference and learning

NS Singh, K Kobayashi, Q Cao, K Selcuk, T Hu… - Nature …, 2024 - nature.com
Extending Moore's law by augmenting complementary-metal-oxide semiconductor (CMOS)
transistors with emerging nanotechnologies (X) has become increasingly important. One …

Training deep Boltzmann networks with sparse Ising machines

S Niazi, S Chowdhury, NA Aadit, M Mohseni, Y Qin… - Nature …, 2024 - nature.com
The increasing use of domain-specific computing hardware and architectures has led to an
increasing demand for unconventional computing approaches. One such approach is the …

From MTJ device to hybrid CMOS/MTJ circuits: A review

VK Joshi, P Barla, S Bhat, BK Kaushik - IEEE Access, 2020 - ieeexplore.ieee.org
Spintronics is one of the growing research areas which has the capability to overcome the
issues of static power dissipation and volatility suffered by the complementary metal-oxide …