Activation of implanted Si, Ge, and Sn donors in high-resistivity halide vapor phase epitaxial β-Ga2O3: N with high mobility
Activation of implanted donors into a highly-resistive, nitrogen-doped homoepitaxial β-Ga 2
O 3 has been investigated. Nitrogen acceptors with the concentration of∼ 10 17 cm− 3 were …
O 3 has been investigated. Nitrogen acceptors with the concentration of∼ 10 17 cm− 3 were …
Nitrogen-doped β-Ga2O3 vertical transistors with a threshold voltage of≥ 1.3 V and a channel mobility of 100 cm2 V− 1 s− 1
D Wakimoto, CH Lin, QT Thieu… - Applied Physics …, 2023 - iopscience.iop.org
We demonstrate high-performance normally-off multi-fin β-Ga 2 O 3 vertical transistors with a
wide fin width from 1.0 to 2.0 μm by using a nitrogen-doped β-Ga 2 O 3 high-resistive layer …
wide fin width from 1.0 to 2.0 μm by using a nitrogen-doped β-Ga 2 O 3 high-resistive layer …
Experimental determination of critical thickness limitations of (010) β-(AlxGa1− x) 2O3 heteroepitaxial films
The effect of heteroepitaxial β-(Al x Ga 1− x) 2 O 3 film thickness and Al content on surface
morphology was characterized to experimentally determine the critical thickness limitations …
morphology was characterized to experimentally determine the critical thickness limitations …
Computational design of optimal heterostructures for
Ga 2 O 3 is a wide-band-gap material of interest for a wide variety of devices, many of these
requiring heterostructures, for instance, to achieve carrier confinement. A common method to …
requiring heterostructures, for instance, to achieve carrier confinement. A common method to …
Design and simulation of T‐gate AlN/β‐Ga2O3 HEMT for DC, RF and high‐power nanoelectronics switching applications
In this paper, we report DC and RF analysis of a T‐gate AlN/β‐Ga2O3 high electron mobility
transistors (HEMTs) by optimizing the gate‐drain distance (L GD) and two T‐gate …
transistors (HEMTs) by optimizing the gate‐drain distance (L GD) and two T‐gate …
N2O grown high Al composition nitrogen doped β-(AlGa) 2O3/β-Ga2O3 using MOCVD
We report on the MOCVD growth of smooth (010)(Al x Ga 1–x) 2 O 3 and (100)(Al y Ga 1–y)
2 O 3 epitaxial films on β-Ga 2 O 3 substrates with (010) and (100) orientations, respectively …
2 O 3 epitaxial films on β-Ga 2 O 3 substrates with (010) and (100) orientations, respectively …
First-principles study on the structural and electronic properties of β-(AlxGa1-x) 2O3 alloy
CZ Zhao, KY Zheng - Journal of Physics and Chemistry of Solids, 2024 - Elsevier
The generalized gradient approximation plus U parameter method is adopted to study the
structural and electronic properties of β-(Al x Ga 1-x) 2 O 3. The results show that the bond …
structural and electronic properties of β-(Al x Ga 1-x) 2 O 3. The results show that the bond …
Assessment of channel temperature in β-(AlxGa1− x) 2O3/Ga2O3 heterostructure field-effect transistors using visible wavelength thermoreflectance thermal imaging
This work demonstrates direct, rapid 2D thermal mapping measurement capabilities of the
ultrawide bandgap semiconductor channel of lateral β-(Al x Ga 1− x) 2 O 3/Ga 2 O 3 …
ultrawide bandgap semiconductor channel of lateral β-(Al x Ga 1− x) 2 O 3/Ga 2 O 3 …
Reduced temperature in lateral (AlxGa1− x) 2O3/Ga2O3 heterojunction field effect transistor capped with nanocrystalline diamond
HN Masten, JS Lundh, TI Feygelson, K Sasaki… - Applied Physics …, 2024 - pubs.aip.org
The low thermal conductivity of β-Ga 2 O 3 is a significant concern for maximizing the
potential of this ultra-wide bandgap semiconductor as a power switching device technology …
potential of this ultra-wide bandgap semiconductor as a power switching device technology …
[HTML][HTML] Electrothermal enhancement of β-(AlxGa1− x) 2O3/Ga2O3 heterostructure field-effect transistors via back-end-of-line sputter-deposited AlN layer
The electrothermal device performance of β-(Al 0.21 Ga 0.79) 2 O 3/Ga 2 O 3 heterostructure
field-effect transistors (HFETs) was enhanced by incorporating a 400 nm thick AlN capping …
field-effect transistors (HFETs) was enhanced by incorporating a 400 nm thick AlN capping …