A review on performance comparison of advanced MOSFET structures below 45 nm technology node
N Mendiratta, SL Tripathi - Journal of Semiconductors, 2020 - iopscience.iop.org
CMOS technology is one of the most frequently used technologies in the semiconductor
industry as it can be successfully integrated with ICs. Every two years the number of MOS …
industry as it can be successfully integrated with ICs. Every two years the number of MOS …
[HTML][HTML] Comprehensive Review of FinFET Technology: History, Structure, Challenges, Innovations, and Emerging Sensing Applications
The surge in demand for 3D MOSFETs, such as FinFETs, driven by recent technological
advances, is explored in this review. FinFETs, positioned as promising alternatives to bulk …
advances, is explored in this review. FinFETs, positioned as promising alternatives to bulk …
Impact of band gap and gate dielectric engineering on novel Si0. 1Ge0. 9-GaAs lateral N-type charge plasma based JLTFET
K Kumar, SC Sharma - Microelectronics Journal, 2022 - Elsevier
In this research article, a device called dual dielectric gate hetero-material junctionless TFET
(DD-HJLTFET) is proposed using a novel amalgamation of Si 0.1 Ge 0.9/GaAs for the first …
(DD-HJLTFET) is proposed using a novel amalgamation of Si 0.1 Ge 0.9/GaAs for the first …
Sensitivity analysis of biomolecule nanocavity immobilization in a dielectric modulated triple-hybrid metal gate-all-around junctionless NWFET biosensor for detecting …
In this paper, a novel biomolecule nanocavity immobilization in a dielectric modulated triple-
hybrid metal gate-all-around (THM-GAA) junctionless (JL) NWFET has been proposed to …
hybrid metal gate-all-around (THM-GAA) junctionless (JL) NWFET has been proposed to …
Numerical study of JAM-GS-GAA FinFET: a Fin aspect ratio optimization for upgraded analog and intermodulation distortion performance
This paper optimizes the fin aspect ratio (AR) of Junctionless Accumulation Mode Gate Stack
Gate All Around (JAM-GS-GAA) FinFET with constant conducting channel area for upgraded …
Gate All Around (JAM-GS-GAA) FinFET with constant conducting channel area for upgraded …
TCAD investigation of ferroelectric based substrate MOSFET for digital application
R Mann, R Chaujar - Silicon, 2022 - Springer
The present investigation is focused on the analog/RF performance of ferroelectric (FE)
based substrate metal oxide semiconductor field effect transistor (MOSFET) for digital …
based substrate metal oxide semiconductor field effect transistor (MOSFET) for digital …
Analog/RF performance and effect of temperature on ferroelectric layer improved FET device with spacer
In this article, we investigated the analog performance and RF (Radio Frequency)
performance of ferroelectric layer improved Field Effect Transistor device that is metal …
performance of ferroelectric layer improved Field Effect Transistor device that is metal …
Polarization induced doping and high-k passivation engineering on T-gate MOS-HEMT for improved RF/microwave performance
High electron-mobility transistors (HEMTs) based on III-nitrides are well-known as ideal
choices for high-power, radio-frequency applications. HEMTs, on the other hand, must deal …
choices for high-power, radio-frequency applications. HEMTs, on the other hand, must deal …
Sub-20 nm GaAs junctionless FinFET for biosensing application
This work proposes a dielectric modulated GaAs junctionless FinFET as a biological sensor
in the sub-20 regime. In the proposed biosensor, HfO 2 (ᴋ= 25) is used as a base oxide …
in the sub-20 regime. In the proposed biosensor, HfO 2 (ᴋ= 25) is used as a base oxide …
Numerical simulation of analog metrics and parasitic capacitances of GaAs GS-GAA FinFET for ULSI switching applications
This paper explores the efficacy of Gallium Arsenide (GaAs) as a fin material on the analog
metrics and parasitic capacitances of Gate Stack Gate-All-Around (GS-GAA) FinFET …
metrics and parasitic capacitances of Gate Stack Gate-All-Around (GS-GAA) FinFET …