Different physics-based negative bias temperature instability (NBTI) models as proposed in
the literature are reviewed, and the predictive capability of these models is benchmarked …

Abstract Bias Temperature Instability (BTI) is one of the most crucial reliability issues in
modern CMOS technology. It leads to shift in device parameters, which eventually affect …

A modeling framework is proposed to predict the degradation and recovery of threshold
voltage shift (ΔV T) due to negative bias temperature instability. Double interface reaction …

After nearly half a century of research into the bias temperature instability, two classes of
models have emerged as the strongest contenders. One class of models, the reaction …

The physics-based BTI Analysis Tool (BAT) is used to model the time kinetics of threshold
voltage shift (ΔV T) during and after NBTI in p-channel planar bulk and FDSOI MOSFETs …

This paper showcases the universality of NBTI and its dependencies on time, bias,
temperature, AC frequency and pulse duty cycle across different process integration …

NBTI and PBTI are studied in IL/HK/MG gate stacks having EOT down to~ 6Å and fabricated
using low T RTP based thermal IL and a novel IL/HK integration. At equivalent EOT …

In this paper, an industry-level new-generation EDA solution for reliability-aware design in
nanoscale FinFET technology is presented for the first time, with new compact transistor …

A comprehensive modeling framework involving mutually uncorrelated contribution from
interface trap generation and hole trapping in pre-existing, process related gate insulator …

In this paper, we investigate the effects of negative bias instability (NBTI) and self-heating
effect (SHE) on threshold voltage in NSFETs. To explore accurately the interaction between …