Analysis of dislocation configurations in SiC crystals through X-ray topography aided by ray tracing simulations
Silicon carbide as a wide bandgap semiconductor is of great research interest for its
widespread deployment in a range of electronic and optoelectronic devices, particularly in …
widespread deployment in a range of electronic and optoelectronic devices, particularly in …
Effective penetration depth investigation for Frank type dislocation (deflected TSDs/TMDs) on grazing incidence synchrotron X-ray topographs of 4H-SiC wafers
In 4H-SiC crystals, Frank type dislocations are created through the deflection of threading
screw/mixed dislocations onto the basal plane. Grazing-incidence X-ray topographs are …
screw/mixed dislocations onto the basal plane. Grazing-incidence X-ray topographs are …
Punching of Prismatic Dislocation Loops from Inclusions in 4H-SiC Wafers
For improving crystal quality of PVT-Grown silicon carbide (SiC) for power electronic
applications, a comprehensive understanding of the mechanisms of generation …
applications, a comprehensive understanding of the mechanisms of generation …