[图书][B] Compact hierarchical bipolar transistor modeling with HICUM
M Schröter, A Chakravorty - 2010 - World Scientific
Compact Hierarchical Bipolar Transistor Modeling with HiCUM will be of great practical
benefit to professionals from the process development, modeling and circuit design …
benefit to professionals from the process development, modeling and circuit design …
A 90nm SiGe BiCMOS technology for mm-wave and high-performance analog applications
JJ Pekarik, J Adkisson, P Gray, Q Liu… - 2014 IEEE Bipolar …, 2014 - ieeexplore.ieee.org
We present the electrical characteristics of the first 90nm SiGe BiCMOS technology
developed for production in IBM's large volume 200mm fabrication line. The technology …
developed for production in IBM's large volume 200mm fabrication line. The technology …
Design and analysis of a low loss, wideband digital step attenuator with minimized amplitude and phase variations
A compact, low loss, wideband digital step attenuator (DSA) is presented. The proposed
DSA utilizes amplitude/phase-compensated T-type attenuator cells, in which the locations of …
DSA utilizes amplitude/phase-compensated T-type attenuator cells, in which the locations of …
Nanoscale SiGe BiCMOS technologies: From 55 nm reality to 14 nm opportunities and challenges
P Chevalier, G Avenier, E Canderle… - 2015 IEEE Bipolar …, 2015 - ieeexplore.ieee.org
This paper looks back to the development of highspeed BiCMOS technologies in
STMicroelectronics for the past 15 years and discusses the perspectives for next …
STMicroelectronics for the past 15 years and discusses the perspectives for next …
A 0.8 THz SiGe HBT Operating at 4.3 K
PS Chakraborty, AS Cardoso, BR Wier… - IEEE Electron …, 2014 - ieeexplore.ieee.org
We demonstrate record ac performance (0.8 THz) for a silicon-germanium heterojunction
bipolar transistor (SiGe HBT) operating at cryogenic temperatures. An extracted peak f MAX …
bipolar transistor (SiGe HBT) operating at cryogenic temperatures. An extracted peak f MAX …
Performance limits, design and implementation of mm-wave SiGe HBT class-E and stacked class-E power amplifiers
<? Pub Dtl=""?> Design equations and performance limits of Class-E power amplifiers at mm-
waves, including the limitations imposed by active and passive devices in a given …
waves, including the limitations imposed by active and passive devices in a given …
Device and technology evolution for Si-based RF integrated circuits
HS Bennett, R Brederlow, JC Costa… - … on Electron Devices, 2005 - ieeexplore.ieee.org
The relationships between device feature size and device performance figures of merit
(FoMs) are more complex for radio frequency (RF) applications than for digital applications …
(FoMs) are more complex for radio frequency (RF) applications than for digital applications …
Half-terahertz operation of SiGe HBTs
R Krithivasan, Y Lu, JD Cressler… - IEEE electron device …, 2006 - ieeexplore.ieee.org
This letter presents the first demonstration of a silicon-germanium heterojunction bipolar
transistor (SiGe HBT) capable of operation above the one-half terahertz (500 GHz) …
transistor (SiGe HBT) capable of operation above the one-half terahertz (500 GHz) …
Schottky barrier diode circuits in silicon for future millimeter-wave and terahertz applications
UR Pfeiffer, C Mishra, RM Rassel… - IEEE Transactions …, 2008 - ieeexplore.ieee.org
This paper presents Schottky barrier diode circuits fully integrated in a 0.13-mum SiGe
BiCMOS process technology. A subharmonically pumped upconverter and a frequency …
BiCMOS process technology. A subharmonically pumped upconverter and a frequency …
X-and K-band SiGe HBT LNAs with 1.2-and 2.2-dB mean noise figures
This paper presents low-noise amplifiers (LNA) at X-and K-band frequencies in a 0.18-μm
SiGe HBT technology. A method of noise match optimization with respect to base inductance …
SiGe HBT technology. A method of noise match optimization with respect to base inductance …