Atomically precise manufacturing of silicon electronics

J Pitters, J Croshaw, R Achal, L Livadaru, S Ng… - ACS …, 2024 - ACS Publications
Atomically precise manufacturing (APM) is a key technique that involves the direct control of
atoms in order to manufacture products or components of products. It has been developed …

Silicon nanostructures for solid-state hydrogen storage: A review

RC Muduli, P Kale - International Journal of Hydrogen Energy, 2023 - Elsevier
Sustainable development of hydrogen energy is a prime concern to address the rising
energy demand and the global energy problem since the hydrogen economy is reliable for …

[图书][B] Surface science: foundations of catalysis and nanoscience

KW Kolasinski - 2019 - books.google.com
An updated fourth edition of the text that provides an understanding of chemical
transformations and the formation of structures at surfaces The revised and enhanced fourth …

GaP-nucleation on exact Si (0 0 1) substrates for III/V device integration

K Volz, A Beyer, W Witte, J Ohlmann, I Németh… - Journal of Crystal …, 2011 - Elsevier
This paper summarizes our present knowledge of the defect-free nucleation of III/V
semiconductors on exactly oriented Si (001) surfaces. A defect-free III/V nucleation layer on …

Nanoscale silicon porous materials for efficient hydrogen storage application

M Saeed, HM Marwani, U Shahzad, AM Asiri… - Journal of Energy …, 2024 - Elsevier
The increasing energy demand and the worldwide energy crisis must be met in large part
via the sustainable growth of hydrogen energy, since this economy is relied upon to provide …

Lithography for robust and editable atomic-scale silicon devices and memories

R Achal, M Rashidi, J Croshaw, D Churchill… - Nature …, 2018 - nature.com
At the atomic scale, there has always been a trade-off between the ease of fabrication of
structures and their thermal stability. Complex structures that are created effortlessly often …

Hydrogen detection near surfaces and shallow interfaces with resonant nuclear reaction analysis

M Wilde, K Fukutani - Surface science reports, 2014 - Elsevier
This review introduces hydrogen depth profiling by nuclear reaction analysis (NRA) via the
resonant 1 H (15 N, αγ) 12 C reaction as a versatile method for the highly depth-resolved …

A sub-ppm acetone gas sensor for diabetes detection using 10 nm thick ultrathin InN FETs

KW Kao, MC Hsu, YH Chang, S Gwo, JA Yeh - Sensors, 2012 - mdpi.com
An indium nitride (InN) gas sensor of 10 nm in thickness has achieved detection limit of 0.4
ppm acetone. The sensor has a size of 1 mm by 2.5 mm, while its sensing area is 0.25 mm …

Alkali and transition metal atom-functionalized germanene for hydrogen storage: a DFT investigation

AN Sosa, F de Santiago, Á Miranda, A Trejo… - International Journal of …, 2021 - Elsevier
In this work, we have performed density functional theory-based calculations to study the
adsorption of H 2 molecules on germanene decorated with alkali atoms (AM) and transition …

Quantum and classical dynamics of reactive scattering of H 2 from metal surfaces

GJ Kroes, C Díaz - Chemical Society Reviews, 2016 - pubs.rsc.org
We review the state-of-the art in dynamics calculations on the reactive scattering of H2 from
metal surfaces, which is an important model system of an elementary reaction that is …