[HTML][HTML] Reliability Simulation of IGBT Module with Different Solders Based on the Finite Element Method
H Ma, M Gou, X Tian, W Tan, H Liang - Metals, 2024 - mdpi.com
The interconnecting solder is a key control factor for the reliability of electronic power
packaging because it highly affects the junction temperature of insulated-gate bipolar …
packaging because it highly affects the junction temperature of insulated-gate bipolar …
Glass-based encapsulant enabling SiC power devices to long-term operate at 300° C
J Chen, T Luo, H Huang, L Zhang, W Chen, G Qin… - Applied Surface …, 2025 - Elsevier
The high-temperature applications of Silicon Carbide (SiC) power devices are constrained
by traditional epoxy molding compound (EMC). A significant challenge arises from the …
by traditional epoxy molding compound (EMC). A significant challenge arises from the …
Multi-Objective Optimization of a 1200-V Fan-Out Panel-Level SiC MOSFET Packaging with Improved Genetic and Particle Swarm Algorithms
X Yan, W Chen, W Li, J Jiang, X Fan… - 2024 IEEE 74th …, 2024 - ieeexplore.ieee.org
Silicon carbide (SiC) MOSFETs, as leading wide bandgap semiconductor devices, exhibit
superior stability and reliability under high-temperature, high-switching frequencies, and …
superior stability and reliability under high-temperature, high-switching frequencies, and …