Because of the rapid increase in commercially available Fourier transform infrared
spectrometers and computers over the past ten years, it has now become feasible to use IR …

The fields of plasmonics, Raman spectroscopy and atomic force microscopy have recently
undergone considerable development, but independently of one another. By combining …

Most of the books on infrared characterization are for applications in chemistry and no book
has been dedicated to infrared characterization for microelectronics. The focus of the book …

Application of silicon based microsensors in electrolyte solutions is hampered by insufficient
barrier properties and poor corrosion resistance of common passivation layers used to …

The band alignment at the SiO 2-GaN interface is important for passivation of high voltage
devices and for gate insulator applications. X-ray photoelectron spectroscopy and ultraviolet …

Dielectric silicate glass films have been obtained from tetraethylorthosilicate using both low-
pressure chemical vapour deposition and plasma-enhanced chemical vapour deposition …

A single chamber system for plasma-enhanced chemical vapor deposition was employed to
deposit different films of SiO x: N, H with 0.85⩽ x⩽ 1.91, which are studied here by Fourier …

The volumetric heat capacity and thermal conductivity of silicon-dioxide films prepared using
low-pressure chemical vapor deposition (LPCVD) are measured. The measurements …

In microelectronics the thermal conductivity of dielectric films such as SiO2 is of concern
because, as dimensions shrink, heat removal from devices becomes a critical problem. A …

Silicon dioxide thin films are deposited on (100) silicon substrates at low pressure (5 mTorr),
from O 2/tetraethoxysilane (TEOS) helicon plasmas. The reactor is operated at 300 W radio …