The concept of direct band gap group IV materials may offer a paradigm change for Si-
photonics concerning the monolithic implementation of light emitters: the idea is to integrate …

Large-scale optoelectronics integration is limited by the inability of Si to emit light efficiently,
because Si and the chemically well-matched Ge are indirect-bandgap semiconductors. To …

Monolithically integrated, active photonic devices on Si are key components in Si-based
large-scale electronic-photonic integration for future generations of high-performance, low …

The strong correlation between advancing the performance of Si microelectronics and their
demand of low power consumption requires new ways of data communication. Photonic …

Germanium has long been regarded as a promising laser material for silicon based opto-
electronics. It is CMOS-compatible and has a favourable band structure, which can be tuned …

We report uniaxial tensile strains up to 5.7% along〈 100〉 in suspended germanium (Ge)
wires on a silicon substrate, measured using Raman spectroscopy. This strain is sufficient to …

The monolithic integration of III-V compound semiconductor devices with silicon presents
physical and technological challenges, linked to the creation of defects during the deposition …

All-optical modulation has been demonstrated in a germanium-on-silicon rib waveguide
over the mid-infrared wavelength range of 2–3 μm using a free-carrier absorption scheme …

Strain engineering is a powerful approach in micro-and optoelectronics to enhance carrier
mobility, tune the bandgap of heterostructures, or break lattice symmetry for nonlinear optics …

Heavily doped semiconductor thin films are very promising for application in mid-infrared
plasmonic devices because the real part of their dielectric function is negative and broadly …