[HTML][HTML] Degradation Prediction of GaN HEMTs under Hot-Electron Stress Based on ML-TCAD Approach
K Wang, H Jiang, Y Liao, Y Xu, F Yan, X Ji - Electronics, 2022 - mdpi.com
In this paper, a novel approach that combines technology computer-aided design (TCAD)
simulation and machine learning (ML) techniques is demonstrated to assist the analysis of …
simulation and machine learning (ML) techniques is demonstrated to assist the analysis of …