Insulating materials for realising carbon neutrality: Opportunities, remaining issues and challenges
The 2050 carbon‐neutral vision spawns a novel energy structure revolution, and the
construction of the future energy structure is based on equipment innovation. Insulating …
construction of the future energy structure is based on equipment innovation. Insulating …
A survey on switching oscillations in power converters
T Liu, TTY Wong, ZJ Shen - … of Emerging and Selected Topics in …, 2019 - ieeexplore.ieee.org
High-frequency power converters enabled by wide bandgap (WBG) and silicon
semiconductor devices offer distinct advantages in power density and dynamic performance …
semiconductor devices offer distinct advantages in power density and dynamic performance …
Overview of high voltage SiC power semiconductor devices: Development and application
Research on high voltage (HV) silicon carbide (SiC) power semiconductor devices has
attracted much attention in recent years. This paper overviews the development and status …
attracted much attention in recent years. This paper overviews the development and status …
10-kV SiC MOSFET power module with reduced common-mode noise and electric field
CM DiMarino, B Mouawad, CM Johnson… - … on Power Electronics, 2019 - ieeexplore.ieee.org
The advancement of silicon carbide (SiC) power devices with voltage ratings exceeding 10
kV is expected to revolutionize medium-and high-voltage systems. However, present power …
kV is expected to revolutionize medium-and high-voltage systems. However, present power …
Design of a 10 kV SiC MOSFET-based high-density, high-efficiency, modular medium-voltage power converter
Simultaneously imposed challenges of high-voltage insulation, high dv/dt, high-switching
frequency, fast protection, and thermal management associated with the adoption of 10 kV …
frequency, fast protection, and thermal management associated with the adoption of 10 kV …
Impact of power module parasitic capacitances on medium-voltage SiC MOSFETs switching transients
DN Dalal, N Christensen, AB Jørgensen… - IEEE Journal of …, 2019 - ieeexplore.ieee.org
Increased switching speeds of wide bandgap (WBG) semiconductors result in a significant
magnitude of the displacement currents through power module parasitic capacitances that …
magnitude of the displacement currents through power module parasitic capacitances that …
Parasitic capacitive couplings in medium voltage power electronic systems: An overview
Recent developments within the field of medium voltage wide-bandgap semiconductor
devices are drawing attention from both researchers and industries due to the demanding …
devices are drawing attention from both researchers and industries due to the demanding …
Design and experimental validation of a wire-bond-less 10-kV SiC MOSFET power module
C DiMarino, B Mouawad, CM Johnson… - IEEE Journal of …, 2019 - ieeexplore.ieee.org
Wide bandgap (WBG) power devices with voltage ratings exceeding 10 kV have the
potential to revolutionize medium-and high-voltage systems due to their high-speed …
potential to revolutionize medium-and high-voltage systems due to their high-speed …
Power cell design and assessment methodology based on a high-current 10-kV SiC MOSFET half-bridge module
While 10-kV silicon-carbide (SiC) MOSFETs are gradually penetrating medium-voltage (MV)
applications, intertwined challenges concerning high-voltage insulation, high dv/dt …
applications, intertwined challenges concerning high-voltage insulation, high dv/dt …
A 10 kV SiC MOSFET power module with optimized system interface and electric field distribution
This article introduces a holistic and systematic design methodology tailored to the 10 kV
silicon carbide (SiC) mosfet power modules. Multiobjective optimization was achieved with …
silicon carbide (SiC) mosfet power modules. Multiobjective optimization was achieved with …