Superjunction has arguably been the most creative and important concept in the power
device field since the introduction of the insulated gate bipolar transistor (IGBT) in the 1980s …

This paper discusses extrapolations of current silicon power device technology into the
future, followed by discussions of wide band gap (WBG) power devices with a focus on …

Silicon‐based high‐power devices continue to play an enabling role in modern high‐power
systems, especially in the fields of traction, industrial and grid applications. Today …

In this paper, we present a detailed analysis and optimization of the superjunction (SJ)
insulated gate bipolar transistor (IGBT). The SJ IGBT is a new device that breaks the IGBT …

In this letter, 650 V generation I (thin) and generation II (ultrathin) super-junction insulated
gate bipolar transistors (SJ-IGBT) based on deep trench etching and refilling processes are …

The aim of this paper is to demonstrate the application of the superjunction (SJ) design in an
insulated gate bipolar transistor (IGBT). Bipolar conduction is present and enhanced at the …

In this letter, we present the “anode-side” SuperJunction trench field stop+ IGBT concept with
drift region SuperJunction pillars placed at the anode side of the structure rather than the …

This article studies the underlying physical mechanism and comprehensive characteristics
of the N-channel IGBT (N-IGBT) with P-drift region (PD-IGBT). Distinguishing from the …

650V superjunction IGBTs have been fabricated. Depending on IGBT structures as well as
process conditions, competitive trade-off performances have been observed. V cesat of 1.4 …

A unique and novel, 60 μm deep trench and refill process for manufacturing Si-based Super-
Junction device structures for high-voltage applications beyond 600 V is discussed on the …