Performance evaluation and comparative analysis between traditional CNTFET based 9 T SRAM cells
CNTFET is more prominent for its performance when compared with conventional CMOS
even beyond the 10 nm technology node because of its excellent thermal conductivities …
even beyond the 10 nm technology node because of its excellent thermal conductivities …
Designing and performance analysis of 7 T CNTFET based novel SRAM cell for IoT application
The selection of the title includes designing of SRAM cell using CNTFET because CNTFET
overcomes all the issues coming from CMOS technology beyond the 10nm technology …
overcomes all the issues coming from CMOS technology beyond the 10nm technology …
A Comparative Analyze of FinFET and Bulk MOSFET SRAM Design
W Wang - 2022 International Conference on Applied Physics …, 2022 - ieeexplore.ieee.org
FinFET technology has become the most popular topic in submicron SoC and VSLI design
in recent years, attributable to its numerous advantages, including excellent scalability and …
in recent years, attributable to its numerous advantages, including excellent scalability and …
Performance Evaluation and Comparison of CNTFET-Based 7T SRAM with 6T SRAM
Excellent thermal conductivities, superior current capabilities and ballistic transport
operation these prominent properties of carbon nanotube field-effect transistor technology …
operation these prominent properties of carbon nanotube field-effect transistor technology …
Comparative analysis of Full Adders using CNTFET in 32nm Technology
In any electronic component, the main factor for measuring the performance criteria is full
adders. This thesis investigates and analyses the efficiency of full adder circuits using …
adders. This thesis investigates and analyses the efficiency of full adder circuits using …
Impact of Variation of Performance Parameters on the Efficiency of CNTFET Based 7T SRAM Cells
Technology node modification is the demand of the present era of the IC industry.
Conventional CMOS to FINFET and now CNTFET is playing a major role to fulfill this …
Conventional CMOS to FINFET and now CNTFET is playing a major role to fulfill this …
Comparative Analysis of 10T SRAM Cell using Nanodevices
Most of the high-speed circuits use static random access memory (SRAM) to store
electronics data on-chip. The necessity of designing low-area and high-speed integrated …
electronics data on-chip. The necessity of designing low-area and high-speed integrated …