Aircraft distributed electric propulsion technologies—a review
Global transportation has shifted toward electromobility to achieve net-zero emission, and in
the next few decades, commercial electric aircraft is likely to become a reality. This transition …
the next few decades, commercial electric aircraft is likely to become a reality. This transition …
A review of silicon carbide MOSFETs in electrified vehicles: Application, challenges, and future development
B Shi, AI Ramones, Y Liu, H Wang, Y Li… - IET Power …, 2023 - Wiley Online Library
Compared with silicon‐based Insulated Gate Bipolar Transistors (IGBTs), silicon carbide
(SiC) Metal‐Oxide‐Semiconductor Field‐Effect Transistors (MOSFETs) are characterized by …
(SiC) Metal‐Oxide‐Semiconductor Field‐Effect Transistors (MOSFETs) are characterized by …
Development of high-power high switching frequency cryogenically cooled inverter for aircraft applications
To better support the superconducting propulsion system in the future aircraft applications,
the technologies of high-power high switching frequency power electronics systems at …
the technologies of high-power high switching frequency power electronics systems at …
Degradation of SiC MOSFETs under high-bias switching events
Evaluating the robustness of power semiconductor devices is key for their adoption into
power electronics applications. Recent static acceleration tests have revealed that SiC metal …
power electronics applications. Recent static acceleration tests have revealed that SiC metal …
Degradation analysis of planar, symmetrical and asymmetrical trench SiC MOSFETs under repetitive short circuit impulses
In this article, the reliability of planar, symmetrical, and asymmetrical trench SiC mosfet s is
analysed under repetitive short circuit impulses at 300 and 450 K. Both static and dynamic …
analysed under repetitive short circuit impulses at 300 and 450 K. Both static and dynamic …
Compact-interleaved packaging method of power module with dynamic characterization of 4H-SiC MOSFET and development of power electronic converter at …
Due to the outstanding material properties, silicon carbide (SiC) power device is the most
promising alternative to silicon devices and can work at higher junction temperature …
promising alternative to silicon devices and can work at higher junction temperature …
Comprehensive analysis of paralleled sic mosfets current imbalance under asynchronous gate signals
Parallel-connected power device is an extensively applied solution in the industry to
increase the current rating of the converter system. However, due to the undesired printed …
increase the current rating of the converter system. However, due to the undesired printed …
Comprehensive assessment of avalanche operating boundary of SiC planar/trench MOSFET in cryogenic applications
The avalanche ruggedness of power devices becomes a crucial issue to ensure the safe
operation of the power conversion systems, particularly under the extreme temperature …
operation of the power conversion systems, particularly under the extreme temperature …
Cryogenically-cooled power electronics for long-distance aircraft
H Schefer, WR Canders, J Hoffmann, R Mallwitz… - IEEE …, 2022 - ieeexplore.ieee.org
New aerodynamic aircraft concepts enable the storage of volumetric liquid hydrogen (LH2).
Additionally, the low temperatures of LH2 allow technologies such as the superconductivity …
Additionally, the low temperatures of LH2 allow technologies such as the superconductivity …
Comprehensive characterization of the 4H-SiC planar and trench gate MOSFETs from cryogenic to high temperature
In this article, the static, dynamic, and short-circuit properties of 1.2-kV commercial 4H-SiC
planar and trench gate metal-oxide-semiconductor field-effect transistors (MOSFETs) are …
planar and trench gate metal-oxide-semiconductor field-effect transistors (MOSFETs) are …