[HTML][HTML] Antiferromagnetic spintronics: An overview and outlook

D Xiong, Y Jiang, K Shi, A Du, Y Yao, Z Guo, D Zhu… - Fundamental …, 2022 - Elsevier
Over the past few decades, the diversified development of antiferromagnetic spintronics has
made antiferromagnets (AFMs) interesting and very useful. After tough challenges, the …

[HTML][HTML] Spintronics: A contemporary review of emerging electronics devices

VK Joshi - Engineering science and technology, an international …, 2016 - Elsevier
Spintronics is a new field of research exploiting the influence of electron spin on the
electrical conduction (or current is spin dependent). The major problem is the realization and …

Design of high-speed, low-power non-volatile master slave flip flop (NVMSFF) for memory registers designs

KA Muthappa, ASA Nisha, R Shastri, V Avasthi… - Applied …, 2023 - Springer
High-speed and low-power area-efficient memory solutions are in high demand in today's
smart and internet environment. To program and store data and its associated information, it …

Perpendicular-anisotropy magnetic tunnel junction switched by spin-Hall-assisted spin-transfer torque

Z Wang, W Zhao, E Deng, JO Klein… - Journal of Physics D …, 2015 - iopscience.iop.org
We investigate the magnetization switching induced by spin-Hall-assisted spin-transfer
torque (STT) in a three-terminal device consisting of a perpendicular-anisotropy magnetic …

Spin-transfer torques generated by the anomalous Hall effect and anisotropic magnetoresistance

T Taniguchi, J Grollier, MD Stiles - Physical Review Applied, 2015 - APS
Spin-orbit coupling in ferromagnets gives rise to the anomalous Hall effect and the
anisotropic magnetoresistance, both of which can be used to create spin-transfer torques in …

Reconfigurable codesign of STT-MRAM under process variations in deeply scaled technology

W Kang, L Zhang, JO Klein, Y Zhang… - … on Electron Devices, 2015 - ieeexplore.ieee.org
Recently, spin-transfer torque magnetic random access memory (STT-MRAM) has been
considered as a promising universal memory candidate for future memory and computing …

From MTJ device to hybrid CMOS/MTJ circuits: A review

VK Joshi, P Barla, S Bhat, BK Kaushik - IEEE Access, 2020 - ieeexplore.ieee.org
Spintronics is one of the growing research areas which has the capability to overcome the
issues of static power dissipation and volatility suffered by the complementary metal-oxide …

Low power magnetic full-adder based on spin transfer torque MRAM

E Deng, Y Zhang, JO Klein… - IEEE transactions on …, 2013 - ieeexplore.ieee.org
Power issues have become a major problem of CMOS logic circuits as technology node
shrinks below 90 nm. In order to overcome this limitation, emerging logic-in-memory …

Comparative evaluation of spin-transfer-torque and magnetoelectric random access memory

S Wang, H Lee, F Ebrahimi, PK Amiri… - IEEE Journal on …, 2016 - ieeexplore.ieee.org
Spin-transfer torque random access memory (STT-RAM), as a promising nonvolatile
memory technology, faces challenges of high write energy and low density. The recently …

Spintronics: Emerging ultra-low-power circuits and systems beyond MOS technology

W Kang, Y Zhang, Z Wang, JO Klein… - ACM Journal on …, 2015 - dl.acm.org
Conventional MOS integrated circuits and systems suffer serve power and scalability
challenges as technology nodes scale into ultra-deep-micron technology nodes (eg, below …