[HTML][HTML] Antiferromagnetic spintronics: An overview and outlook
Over the past few decades, the diversified development of antiferromagnetic spintronics has
made antiferromagnets (AFMs) interesting and very useful. After tough challenges, the …
made antiferromagnets (AFMs) interesting and very useful. After tough challenges, the …
[HTML][HTML] Spintronics: A contemporary review of emerging electronics devices
VK Joshi - Engineering science and technology, an international …, 2016 - Elsevier
Spintronics is a new field of research exploiting the influence of electron spin on the
electrical conduction (or current is spin dependent). The major problem is the realization and …
electrical conduction (or current is spin dependent). The major problem is the realization and …
Design of high-speed, low-power non-volatile master slave flip flop (NVMSFF) for memory registers designs
High-speed and low-power area-efficient memory solutions are in high demand in today's
smart and internet environment. To program and store data and its associated information, it …
smart and internet environment. To program and store data and its associated information, it …
Perpendicular-anisotropy magnetic tunnel junction switched by spin-Hall-assisted spin-transfer torque
We investigate the magnetization switching induced by spin-Hall-assisted spin-transfer
torque (STT) in a three-terminal device consisting of a perpendicular-anisotropy magnetic …
torque (STT) in a three-terminal device consisting of a perpendicular-anisotropy magnetic …
Spin-transfer torques generated by the anomalous Hall effect and anisotropic magnetoresistance
Spin-orbit coupling in ferromagnets gives rise to the anomalous Hall effect and the
anisotropic magnetoresistance, both of which can be used to create spin-transfer torques in …
anisotropic magnetoresistance, both of which can be used to create spin-transfer torques in …
Reconfigurable codesign of STT-MRAM under process variations in deeply scaled technology
Recently, spin-transfer torque magnetic random access memory (STT-MRAM) has been
considered as a promising universal memory candidate for future memory and computing …
considered as a promising universal memory candidate for future memory and computing …
From MTJ device to hybrid CMOS/MTJ circuits: A review
Spintronics is one of the growing research areas which has the capability to overcome the
issues of static power dissipation and volatility suffered by the complementary metal-oxide …
issues of static power dissipation and volatility suffered by the complementary metal-oxide …
Low power magnetic full-adder based on spin transfer torque MRAM
Power issues have become a major problem of CMOS logic circuits as technology node
shrinks below 90 nm. In order to overcome this limitation, emerging logic-in-memory …
shrinks below 90 nm. In order to overcome this limitation, emerging logic-in-memory …
Comparative evaluation of spin-transfer-torque and magnetoelectric random access memory
S Wang, H Lee, F Ebrahimi, PK Amiri… - IEEE Journal on …, 2016 - ieeexplore.ieee.org
Spin-transfer torque random access memory (STT-RAM), as a promising nonvolatile
memory technology, faces challenges of high write energy and low density. The recently …
memory technology, faces challenges of high write energy and low density. The recently …
Spintronics: Emerging ultra-low-power circuits and systems beyond MOS technology
Conventional MOS integrated circuits and systems suffer serve power and scalability
challenges as technology nodes scale into ultra-deep-micron technology nodes (eg, below …
challenges as technology nodes scale into ultra-deep-micron technology nodes (eg, below …