Wide band gap (WBG) power electronic devices, such as silicon carbide metal–oxide–
semiconductor field-effect transistors (SiC MOSFETs) and gallium–nitride high-electron …

The outstanding properties of SiO 2, which include high resistivity, excellent dielectric
strength, a large band gap, a high melting point, and a native, low defect density interface …

All engineers could benefit from at least one course in Reliability Physics & Engineering. It is
very likely that, starting with your very first engineering position, you will be asked—how long …

The breakdown of thin oxides (7.9-32 nm) subjected to high-field current injection is
investigated in this study. The physical mechanism of breakdown is found to be localized …

Spintronics is one of the growing research areas which has the capability to overcome the
issues of static power dissipation and volatility suffered by the complementary metal-oxide …

A technique of predicting the lifetime of an oxide to different voltages, different oxide areas,
and different temperatures is presented. Using the defect density model in which defects are …

Berkeley reliability tools (BERT) simulates the circuit degradation (drift) due to hot-electron
degradation in MOSFETs and bipolar transistors and predicts circuit failure rates due to …

The long list of extraordinary properties of SiO2 has been and still is beyond any doubt one
of the key factors of the success of MOS-technology. Indeed, SiO2 is an amorphous insulator …

The present understanding of wear-out and breakdown in ultrathin (t/sub ox/< 5.0 nm)
SiO/sub 2/gate dielectric films and issues relating to reliability projection are reviewed in this …

Miniaturization as well as manufacturing processes that electronics devices are subjected to
often results in to increase in operational parameters such as current density, temperature …