[HTML][HTML] Reliability of wide band gap power electronic semiconductor and packaging: A review
Y Wang, Y Ding, Y Yin - Energies, 2022 - mdpi.com
Wide band gap (WBG) power electronic devices, such as silicon carbide metal–oxide–
semiconductor field-effect transistors (SiC MOSFETs) and gallium–nitride high-electron …
semiconductor field-effect transistors (SiC MOSFETs) and gallium–nitride high-electron …
Ultrathin (<4 nm) and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
The outstanding properties of SiO 2, which include high resistivity, excellent dielectric
strength, a large band gap, a high melting point, and a native, low defect density interface …
strength, a large band gap, a high melting point, and a native, low defect density interface …
[图书][B] Reliability physics and engineering
JW McPherson, JW McPherson, Glaser - 2010 - Springer
All engineers could benefit from at least one course in Reliability Physics & Engineering. It is
very likely that, starting with your very first engineering position, you will be asked—how long …
very likely that, starting with your very first engineering position, you will be asked—how long …
Electrical breakdown in thin gate and tunneling oxides
IC Chen, SE Holland, C Hu - IEEE journal of Solid-state …, 1985 - ieeexplore.ieee.org
The breakdown of thin oxides (7.9-32 nm) subjected to high-field current injection is
investigated in this study. The physical mechanism of breakdown is found to be localized …
investigated in this study. The physical mechanism of breakdown is found to be localized …
From MTJ device to hybrid CMOS/MTJ circuits: A review
Spintronics is one of the growing research areas which has the capability to overcome the
issues of static power dissipation and volatility suffered by the complementary metal-oxide …
issues of static power dissipation and volatility suffered by the complementary metal-oxide …
Modeling and characterization of gate oxide reliability
JC Lee, C Ih-Chin, H Chenming - IEEE Transactions on …, 1988 - ieeexplore.ieee.org
A technique of predicting the lifetime of an oxide to different voltages, different oxide areas,
and different temperatures is presented. Using the defect density model in which defects are …
and different temperatures is presented. Using the defect density model in which defects are …
Berkeley reliability tools-BERT
RH Tu, E Rosenbaum, WY Chan, CC Li… - … on Computer-Aided …, 1993 - ieeexplore.ieee.org
Berkeley reliability tools (BERT) simulates the circuit degradation (drift) due to hot-electron
degradation in MOSFETs and bipolar transistors and predicts circuit failure rates due to …
degradation in MOSFETs and bipolar transistors and predicts circuit failure rates due to …
Degradation and breakdown in thin oxide layers: mechanisms, models and reliability prediction
The long list of extraordinary properties of SiO2 has been and still is beyond any doubt one
of the key factors of the success of MOS-technology. Indeed, SiO2 is an amorphous insulator …
of the key factors of the success of MOS-technology. Indeed, SiO2 is an amorphous insulator …
Ultrathin gate oxide reliability: Physical models, statistics, and characterization
JS Suehle - IEEE Transactions on Electron Devices, 2002 - ieeexplore.ieee.org
The present understanding of wear-out and breakdown in ultrathin (t/sub ox/< 5.0 nm)
SiO/sub 2/gate dielectric films and issues relating to reliability projection are reviewed in this …
SiO/sub 2/gate dielectric films and issues relating to reliability projection are reviewed in this …
Failure mechanisms driven reliability models for power electronics: A review
OE Gabriel, DR Huitink - Journal of …, 2023 - asmedigitalcollection.asme.org
Miniaturization as well as manufacturing processes that electronics devices are subjected to
often results in to increase in operational parameters such as current density, temperature …
often results in to increase in operational parameters such as current density, temperature …