[HTML][HTML] Experimental realization of an extended Fermi-Hubbard model using a 2D lattice of dopant-based quantum dots
The Hubbard model is an essential tool for understanding many-body physics in condensed
matter systems. Artificial lattices of dopants in silicon are a promising method for the analog …
matter systems. Artificial lattices of dopants in silicon are a promising method for the analog …
[HTML][HTML] EUV-induced hydrogen desorption as a step towards large-scale silicon quantum device patterning
Atomically precise hydrogen desorption lithography using scanning tunnelling microscopy
(STM) has enabled the development of single-atom, quantum-electronic devices on a …
(STM) has enabled the development of single-atom, quantum-electronic devices on a …
Atom‐by‐atom fabrication of single and few dopant quantum devices
Atomically precise fabrication has an important role to play in developing atom‐based
electronic devices for use in quantum information processing, quantum materials research …
electronic devices for use in quantum information processing, quantum materials research …
B-Doped δ-Layers and Nanowires from Area-Selective Deposition of BCl3 on Si(100)
Atomically precise, δ-doped structures forming electronic devices in Si have been routinely
fabricated in recent years by using depassivation lithography in a scanning tunneling …
fabricated in recent years by using depassivation lithography in a scanning tunneling …
[HTML][HTML] Atomic-scale control of tunneling in donor-based devices
Atomically precise donor-based quantum devices are a promising candidate for solid-state
quantum computing and analog quantum simulations. However, critical challenges in …
quantum computing and analog quantum simulations. However, critical challenges in …
High-Performance Ge PIN Photodiodes on a 200 mm Insulator with a Resonant Cavity Structure and Monolayer Graphene Absorber for SWIR Detection
J Yu, X Zhao, Y Miao, J Su, Z Kong, H Li… - ACS Applied Nano …, 2024 - ACS Publications
High-responsivity and low dark current resonant-cavity-enhanced (RCE) Ge PIN
photodiodes with a monolayer graphene absorber were demonstrated on a 200 mm …
photodiodes with a monolayer graphene absorber were demonstrated on a 200 mm …
Assessing atomically thin delta-doping of silicon using mid-infrared ellipsometry
Hydrogen lithography has been used to template phosphine-based surface chemistry to
fabricate atomic-scale devices, a process we abbreviate as atomic precision advanced …
fabricate atomic-scale devices, a process we abbreviate as atomic precision advanced …
[HTML][HTML] Multi-scale alignment to buried atom-scale devices using Kelvin probe force microscopy
Fabrication of quantum devices by atomic-scale patterning with scanning tunneling
microscopy (STM) has led to the development of single/few atom transistors, few …
microscopy (STM) has led to the development of single/few atom transistors, few …
Microwave Properties of 2D CMOS Compatible Co‐Planar Waveguides Made from Phosphorus Dopant Monolayers in Silicon
Low‐dimensional microwave interconnects have important applications for nanoscale
electronics, from complementary metal–oxide‐semiconductor (CMOS) to silicon quantum …
electronics, from complementary metal–oxide‐semiconductor (CMOS) to silicon quantum …
Broadband microwave electrical transport spectroscopy for two-dimensional material systems
AL Levy, NM Zimmerman - Journal of applied physics, 2022 - pubs.aip.org
In recent years, interesting materials have emerged that are only available as μm-scale
flakes and whose novel physics might be better understood through broadband microwave …
flakes and whose novel physics might be better understood through broadband microwave …