Recent progress in micro‐LED‐based display technologies
The demand for high‐performance displays is continuously increasing because of their wide
range of applications in smart devices (smartphones/watches), augmented reality, virtual …
range of applications in smart devices (smartphones/watches), augmented reality, virtual …
III-nitride nanostructures: Emerging applications for Micro-LEDs, ultraviolet photonics, quantum optoelectronics, and artificial photosynthesis
In this review article, we discuss the molecular beam epitaxy and basic structural, electronic,
optical, excitonic, chemical and catalytic properties of III-nitride nanostructures, including …
optical, excitonic, chemical and catalytic properties of III-nitride nanostructures, including …
III-nitride semiconductor lasers grown on Si
M Feng, J Liu, Q Sun, H Yang - Progress in Quantum Electronics, 2021 - Elsevier
III-nitride semiconductor laser directly grown on Si is a potential on-chip light source for Si
photonics. Moreover, it may greatly lower the manufacture cost of laser diodes and further …
photonics. Moreover, it may greatly lower the manufacture cost of laser diodes and further …
[HTML][HTML] The recombination mechanisms leading to amplified spontaneous emission at the true-green wavelength in CH3NH3PbBr3 perovskites
We investigated the mechanisms of radiative recombination in a CH 3 NH 3 PbBr 3 hybrid
perovskite material using low-temperature, power-dependent (77 K), and temperature …
perovskite material using low-temperature, power-dependent (77 K), and temperature …
Green gap in GaN-based light-emitting diodes: in perspective
Significant progress has been made in the advancement of light-emitting devices in both the
blue and the red parts of the emission spectrum. However, the quantum efficiency of green …
blue and the red parts of the emission spectrum. However, the quantum efficiency of green …
Polar (,)/ Quantum Wells: Revisiting the Impact of Carrier Localization on the “Green Gap” Problem
We present a detailed theoretical analysis of the electronic and optical properties of c-plane
In Ga N/Ga N quantum-well structures with In contents ranging from 5% to 25%. Special …
In Ga N/Ga N quantum-well structures with In contents ranging from 5% to 25%. Special …
High-power hybrid GaN-based green laser diodes with ITO cladding layer
L Hu, X Ren, J Liu, A Tian, L Jiang, S Huang… - Photonics …, 2020 - opg.optica.org
Green laser diodes (LDs) still perform worst among the visible and near-infrared spectrum
range, which is called the “green gap.” Poor performance of green LDs is mainly related to …
range, which is called the “green gap.” Poor performance of green LDs is mainly related to …
Dislocation suppresses sidewall‐surface recombination of micro‐LEDs
Nonradiative recombination rate that consists of dislocation‐related nonradiative
recombination rate (A0) and surface recombination rate (As) is one of the major parameters …
recombination rate (A0) and surface recombination rate (As) is one of the major parameters …
[HTML][HTML] Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral …
S Hammersley, MJ Kappers, FCP Massabuau… - Applied Physics …, 2015 - pubs.aip.org
InGaN-based light emitting diodes and multiple quantum wells designed to emit in the green
spectral region exhibit, in general, lower internal quantum efficiencies than their blue …
spectral region exhibit, in general, lower internal quantum efficiencies than their blue …
High efficiency InGaN nanowire tunnel junction green micro-LEDs
We report on the study of InGaN nanowire green light emitting diodes (LEDs) with lateral
dimensions varying from∼ 1 to 10 μm. For a device with an areal size∼ 3× 3 μm 2, a …
dimensions varying from∼ 1 to 10 μm. For a device with an areal size∼ 3× 3 μm 2, a …