Annotation" Intermodulation Distortion in Microwave and Wireless Circuits presents the full
range of distortion specs to help practitioners select the right telecommunications equipment …

This paper presents a comprehensive study of intermodulation-distortion response
asymmetries often observed in microwave nonlinear systems subject to a two-tone or …

This paper presents a comprehensive analysis of nonlinear intermodulation distortion (IMD)
behavior in RF CMOS power amplifiers (PAs). Separate analyses are presented for small …

A simple linearization technique using multiple gated common source transistors is
proposed where gate width and gate drive (V/sub gs/-V/sub th/) of each transistor are …

This paper describes the analysis of an optimized envelope shaping function for the
envelope tracking power amplifier (ET PA) and its implementation. The proposed shaping …

This paper presents a nonlinear equivalent circuit model of microwave power GaN high
electron-mobility transistors (HEMTs), amenable for integration into commercial harmonic …

This paper provides a comprehensive analysis of the AM/AM and AM/PM nonlinear
distortion generation mechanisms arising in the most common RF power amplifier (PA) …

In this paper, the intermodulation distortion (IMD) behavior of LDMOS transistors is treated.
First, an analysis is performed to explain measured IMD characteristics in different classes of …

A 2.45 GHz fully differential CMOS power amplifier (PA) with high efficiency and linearity is
presented. For this work, a 0.18-/spl mu/m standard CMOS process with Cu-metal is …

This paper presents a highly linear differential cascode CMOS power amplifier (PA) with
gate bias circuits in Common Source (CS) and Common Gate (CG) amplifiers. The proposed …