[HTML][HTML] Reliability of NAND flash memories: Planar cells and emerging issues in 3D devices

AS Spinelli, C Monzio Compagnoni, AL Lacaita - Computers, 2017 - mdpi.com
We review the state-of-the-art in the understanding of planar NAND Flash memory reliability
and discuss how the recent move to three-dimensional (3D) devices has affected this field …

Reliability of NAND flash arrays: A review of what the 2-D–to–3-D transition meant

CM Compagnoni, AS Spinelli - IEEE Transactions on Electron …, 2019 - ieeexplore.ieee.org
This paper reviews what changed in the reliability of NAND Flash memory arrays after the
paradigm shift in technology evolution determined by the transition from 2-D to 3-D …

A 512-Gb 3-b/cell 64-stacked WL 3-D-NAND flash memory

C Kim, DH Kim, W Jeong, HJ Kim… - IEEE Journal of Solid …, 2017 - ieeexplore.ieee.org
A 64-word-line-stacked 512-Gb 3-b/cell 3-D NAND flash memory is presented. After briefly
examining the challenges that occur to a stack, several technologies are suggested to …

Improving 3D NAND flash memory lifetime by tolerating early retention loss and process variation

Y Luo, S Ghose, Y Cai, EF Haratsch… - Proceedings of the ACM on …, 2018 - dl.acm.org
Compared to planar (ie, two-dimensional) NAND flash memory, 3D NAND flash memory
uses a new flash cell design, and vertically stacks dozens of silicon layers in a single chip …

{Barrier-Enabled}{IO} stack for flash storage

Y Won, J Jung, G Choi, J Oh, S Son, J Hwang… - … USENIX Conference on …, 2018 - usenix.org
This work is dedicated to eliminating the overhead required for guaranteeing the storage
order in the modern IO stack. The existing block device adopts a prohibitively expensive …

A 512Gb 3b/Cell 3D flash memory on a 96-word-line-layer technology

H Maejima, K Kanda, S Fujimura… - … Solid-State Circuits …, 2018 - ieeexplore.ieee.org
The first multi-layer stacked 3D Flash memory was proposed as BiCS FLASH in 2007 [1].
Since then, memory bit density has grown rapidly due to the increase in the number of …

Parabit: processing parallel bitwise operations in nand flash memory based ssds

C Gao, X Xin, Y Lu, Y Zhang, J Yang… - MICRO-54: 54th Annual …, 2021 - dl.acm.org
Processing-in-memory (PIM) and in-storage-computing (ISC) architectures have been
constructed to implement computation inside memory and near storage, respectively. While …

A survey and tutorial on contemporary aspects of multiple-valued logic and its application to microelectronic circuits

V Gaudet - IEEE Journal on Emerging and Selected Topics in …, 2016 - ieeexplore.ieee.org
Multiple-valued logic has a history that goes back to the 1920s. Its flagship symposium was
established in 1971. Despite multiple-valued logic's long history, there have been many …

Constructing large, durable and fast SSD system via reprogramming 3D TLC flash memory

C Gao, M Ye, Q Li, CJ Xue, Y Zhang, L Shi… - Proceedings of the 52nd …, 2019 - dl.acm.org
NAND flash memory based SSDs have been widely studied and adopted. The scaling of
SSD has evolved from plannar (2D) to 3D stacking. Compared with 2D SSD, 3D SSD stacks …

Ferro‐floating memory: Dual‐mode ferroelectric floating memory and its application to in‐memory computing

S Park, S Oh, D Lee, JH Park - InfoMat, 2022 - Wiley Online Library
Various core memory devices have been proposed for utilization in future in‐memory
computing technology featuring high energy efficiency. Flash memory is considered as a …