[图书][B] Microlithography: science and technology
BW Smith, K Suzuki - 2018 - taylorfrancis.com
This new edition of the bestselling Microlithography: Science and Technology provides a
balanced treatment of theoretical and operational considerations, from elementary concepts …
balanced treatment of theoretical and operational considerations, from elementary concepts …
Understanding pattern collapse in photolithography process due to capillary forces
SF Chini, A Amirfazli - Langmuir, 2010 - ACS Publications
Photolithography is the most widely used mass nanoproduction process. Technology
requirements demand smaller nanodevices. However, smaller features risk collapse during …
requirements demand smaller nanodevices. However, smaller features risk collapse during …
Study on the etching characteristics of amorphous carbon layer in oxygen plasma with carbonyl sulfide
JK Kim, SI Cho, NG Kim, MS Jhon, KS Min… - Journal of Vacuum …, 2013 - pubs.aip.org
Carbonyl sulfide (COS) was added to oxygen as the additive etch gas for etching of
amorphous carbon layers (ACL), and its effect on the etching characteristics of ACLs as the …
amorphous carbon layers (ACL), and its effect on the etching characteristics of ACLs as the …
Pattern collapse mitigation strategies for EUV lithography
DL Goldfarb, RL Bruce, JJ Bucchignano… - … EUV) Lithography III, 2012 - spiedigitallibrary.org
In this study, a comprehensive approach towards assessing pattern collapse challenges and
solutions for Extreme Ultraviolet Lithography (EUV) resists beyond the 14nm node is …
solutions for Extreme Ultraviolet Lithography (EUV) resists beyond the 14nm node is …
Role of Oxygen in Amorphous Carbon Hard Mask Plasma Etching
In the current and next-generation Si-based semiconductor manufacturing processes,
amorphous carbon layer (ACL) hard masks are garnering considerable attention for high …
amorphous carbon layer (ACL) hard masks are garnering considerable attention for high …
Collapse behavior of single layer 193-and 157-nm resists: use of surfactants in the rinse to realize the sub-130-nm nodes
S Hien, GK Rich, G Molina, HB Cao… - Advances in Resist …, 2002 - spiedigitallibrary.org
In this study we determined the dimension dependent onset of pattern collapse for different
193 and 157nm resist platforms, and explored production relevant techniques to suppress …
193 and 157nm resist platforms, and explored production relevant techniques to suppress …
Improvement of high resolution lithography by using amorphous carbon hard mask
S Pauliac-Vaujour, P Brianceau, C Comboroure… - Microelectronic …, 2008 - Elsevier
The aim of this paper is to demonstrate a new approach for improving high resolution
lithography by using an amorphous carbon hard mask with an oxide capping layer. A full 3D …
lithography by using an amorphous carbon hard mask with an oxide capping layer. A full 3D …
Hardmask technology for sub-100-nm lithographic imaging
K Babich, AP Mahorowala… - Advances in Resist …, 2003 - spiedigitallibrary.org
The importance of hardmask technology is becoming increasingly evident as the demand for
high-resolution imaging dictates the use of ever-thinner resist films. An appropriately …
high-resolution imaging dictates the use of ever-thinner resist films. An appropriately …
Surfactant-aided supercritical carbon dioxide drying for photoresists to prevent pattern collapse
MY Lee, KM Do, HS Ganapathy, YS Lo, JJ Kim… - The Journal of …, 2007 - Elsevier
Several CO2-soluble surfactants with different molecular architectures were investigated as
possible agents to remove rinse water from aqueous-based photoresists utilizing …
possible agents to remove rinse water from aqueous-based photoresists utilizing …
Evaluation of new molecular resist for EUV lithography
H Oizumi, Y Tanaka, T Kumise, D Shiono… - Journal of …, 2007 - jstage.jst.go.jp
抄録 We designed and synthesized a new partially-protected polyphenol, 25X-MBSA-M, for
which the position and number of protected hydroxyl groups have no dispersion, and …
which the position and number of protected hydroxyl groups have no dispersion, and …