Computing the properties of materials from first principles with SIESTA
N Kaltsoyannis, JE McGrady, D Sánchez-Portal… - … and applications of …, 2004 - Springer
SIESTA was developed as an approach to compute the electronic properties and perform
atomistic simulations of complex materials from first principles. Very large systems, with an …
atomistic simulations of complex materials from first principles. Very large systems, with an …
Excitonic effects in the optical properties of a SiC sheet and nanotubes
The quasiparticle band structure and optical properties of single-walled zigzag and armchair
SiC nanotubes (SiC-NTs) as well as a single SiC sheet are investigated by ab initio many …
SiC nanotubes (SiC-NTs) as well as a single SiC sheet are investigated by ab initio many …
Optical properties of nanotubes: An ab initio study
IJ Wu, GY Guo - Physical Review B—Condensed Matter and Materials …, 2007 - APS
The band structure and optical dielectric function ϵ of single-walled zigzag [(3, 0),(4, 0),(5,
0),(6, 0),(8, 0),(9, 0),(12, 0),(16, 0),(20, 0),(24, 0)], armchair [(3, 3),(4, 4),(5, 5),(8, 8),(12 …
0),(6, 0),(8, 0),(9, 0),(12, 0),(16, 0),(20, 0),(24, 0)], armchair [(3, 3),(4, 4),(5, 5),(8, 8),(12 …
Ab initio study of nitrogen and boron substitutional impurities in single-wall SiC nanotubes
A Gali - Physical Review B—Condensed Matter and Materials …, 2006 - APS
Silicon carbide nanotubes have a great potential for application in chemical sensors in
harsh environment or in biological sensors. It is of interest to explore the electronic …
harsh environment or in biological sensors. It is of interest to explore the electronic …
Second-harmonic generation and linear electro-optical coefficients of SiC polytypes and nanotubes
IJ Wu, GY Guo - Physical Review B—Condensed Matter and Materials …, 2008 - APS
The second-order nonlinear optical susceptibility [χ abc (2)] and linear electro-optical
coefficient (rabc) of a large number of single-walled zigzag, armchair, and chiral silicon …
coefficient (rabc) of a large number of single-walled zigzag, armchair, and chiral silicon …
Solubility of nitrogen and phosphorus in 4H-SiC: A theoretical study
M Bockstedte, A Mattausch, O Pankratov - Applied physics letters, 2004 - pubs.aip.org
The n-type dopants phosphorus and nitrogen, and their complexes with intrinsic point
defects are investigated in 4 H-SiC by first-principles theory. The solubility and electrical …
defects are investigated in 4 H-SiC by first-principles theory. The solubility and electrical …
Investigation of the - Interface Using Low-Energy Muon-Spin-Rotation Spectroscopy
Using positive muons as local probes implanted at low energy enables gathering
information about the material of interest with nanometer-depth resolution (low-energy muon …
information about the material of interest with nanometer-depth resolution (low-energy muon …
Theoretical and electron paramagnetic resonance studies of hyperfine interaction in nitrogen doped 4H and 6H SiC
Motivated by recent experimental findings on the hyperfine signal of nitrogen donor (NC) in
4 H and 6 H SiC, we calculate the hyperfine tensors within the framework of density …
4 H and 6 H SiC, we calculate the hyperfine tensors within the framework of density …
Interaction of boron and phosphorus impurities in silicon nanowires during low-temperature ozone oxidation
N Fukata, J Kaminaga, R Takiguchi… - The Journal of …, 2013 - ACS Publications
In doped Si nanowires (SiNWs) boron (B) atoms segregate to the surface oxide layers
during thermal oxidation, while phosphorus (P) atoms preferentially pile up in Si crystalline …
during thermal oxidation, while phosphorus (P) atoms preferentially pile up in Si crystalline …
Boron and nitrogen impurities in SiC nanowires
IS Santos de Oliveira, RH Miwa - Physical Review B—Condensed Matter and …, 2009 - APS
We have performed a theoretical ab initio study of the B and N impurities in hydrogen-
passivated SiC nanowires (NWs). The calculations were performed within the density …
passivated SiC nanowires (NWs). The calculations were performed within the density …