Design and analysis of radiation hardened 10 T SRAM cell for space and terrestrial applications
Soft errors are the primary concern in space and terrestrial integrated circuit applications.
When a charged particle from space collides with a scaled memory circuit, a transient pulse …
When a charged particle from space collides with a scaled memory circuit, a transient pulse …
A 1.2 v, radiation hardened 14t sram memory cell for aerospace applications
In this paper, a 1.2 V, radiation-hardened 14T SRAM (RHS-14T) memory cell is proposed to
resilience the single event upset (SEU) and dual node upset (DNU) soft errors. The …
resilience the single event upset (SEU) and dual node upset (DNU) soft errors. The …
Low power 8t sram with high stability and bit interleaving capability
R Lorenzo, DL Pradeep… - 2022 2nd International …, 2022 - ieeexplore.ieee.org
A new 8T Static Random-Access Memory (SRAM) presented in this paper. This paper
addresses the issue related to power, delay and bit interleaving (column selection). The …
addresses the issue related to power, delay and bit interleaving (column selection). The …
A low power static noise margin enhanced reliable 8 T SRAM cell
This paper investigates a low leakage power 8 T (LP8T) SRAM cell with high read and write
stability. The proposed LP8T (PLP8T) SRAM cell has separate write and read bit lines. As an …
stability. The proposed LP8T (PLP8T) SRAM cell has separate write and read bit lines. As an …
Design and analysis of 10T SRAM cell with stability characterizations
Nowadays, the use of Static random-access memory (SRAM) is increasing in System on
Chip and VLSI circuits with the arrival of portable devices. Our main focus of research is …
Chip and VLSI circuits with the arrival of portable devices. Our main focus of research is …
A Highly Stable PNN-PPN-10T SRAM Cell With Improved Reliability
A new PNN-PPN 10T static random access memory (SRAM) cell is presented in this paper.
The proposed design aims to address stability of memory cell at worst-case analysis …
The proposed design aims to address stability of memory cell at worst-case analysis …
A low power feedback cutting 8T SRAM cell for improved stability
This paper presents a feed-back cutting 8T (FC8T) SRAM for stability enhancement and to
mitigate the power consumption. The design specifications such as noise margin, power …
mitigate the power consumption. The design specifications such as noise margin, power …
Comparative Analysis of 10T SRAM Cell using Nanodevices
Most of the high-speed circuits use static random access memory (SRAM) to store
electronics data on-chip. The necessity of designing low-area and high-speed integrated …
electronics data on-chip. The necessity of designing low-area and high-speed integrated …