Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and
form factor of power electronics. However, the material composition, architecture, and …

Power semiconductor devices are key to delivering high-efficiency energy conversion in
power electronics systems, which is critical in efforts to reduce energy loss, cut carbon …

Avalanche and surge robustness involve fundamental carrier dynamics under high electric
field and current density. They are also prerequisites of any power device to survive …

Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are …

GaN technology is not only gaining traction in power and RF electronics but is also rapidly
expanding into other application areas including digital and quantum computing electronics …

Owing to its energy efficiency, silicon complementary metal–oxide–semiconductor (CMOS)
technology is the current driving force of the integrated circuit industry. Silicon's narrow …

Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to
facilitate economic growth in a semiconductor industry that is silicon-based and currently …

Among the wide band gap (WBG) semiconductors, silicon carbide (4H-SiC) and gallium
nitride (GaN) are nowadays recognized as outstanding materials for the future of power …

The past decades have witnessed a tremendous development of GaN-based power
electronic devices grown on Si substrate. This article provides a concise introduction …

Wide bandgap aluminum gallium nitride (AlGaN) semiconductor alloys have established
themselves as the key materials for building ultraviolet (UV) optoelectronic and power …