100-nm T-gate InAlAs/InGaAs InP-based HEMTs with fT= 249 GHz and fmax= 415 GHz
LD Wang, P Ding, YB Su, J Chen, BC Zhang… - Chinese Physics …, 2014 - iopscience.iop.org
InAlAs/InGaAs high electron mobility transistors (HEMTs) on an InP substrate with well-
balanced cutoff frequency f T and maximum oscillation frequency f max are reported. An …
balanced cutoff frequency f T and maximum oscillation frequency f max are reported. An …
Monte Carlo modelling of noise in advanced III–V HEMTs
One of the main objectives of modern Microelectronics is the fabrication of devices with
increased cutoff frequency and decreased level of noise. At this moment, the best devices for …
increased cutoff frequency and decreased level of noise. At this moment, the best devices for …
Planar InAs/AlSb HEMTs with ion-implanted isolation
The fabrication and performance of planar InAs/AlSb high-electron-mobility transistors
(HEMTs) based on ion-implantation isolation technology are reported. Ar atoms have been …
(HEMTs) based on ion-implantation isolation technology are reported. Ar atoms have been …
On the electron velocity-field relation in ultra-thin films of III–V compound semiconductors for advanced CMOS technology nodes
E Caruso, A Pin, P Palestri… - 2017 Joint International …, 2017 - ieeexplore.ieee.org
We report Multi-Valley-Multi-Subband Monte Carlo simulations of the velocity-field curves in
bulk and thin film InAs, GaAs and In 0.53 Ga 0.47 As. Our model suggests that surface …
bulk and thin film InAs, GaAs and In 0.53 Ga 0.47 As. Our model suggests that surface …
Kink effect and noise performance in isolated-gate InAs/AlSb high electron mobility transistors
The kink effect can spoil the otherwise excellent low noise performance of InAs/AlSb high
electron mobility transistors. It has its origin in the pile-up of holes (generated by impact …
electron mobility transistors. It has its origin in the pile-up of holes (generated by impact …
Dynamic Monte Carlo study of isolated-gate InAs/AlSb HEMTs
In this work, by means of Monte Carlo simulations, the static and dynamic behavior of
isolated-gate InAs/AlSb high electron mobility transistors (Sb-HEMTs) has been studied and …
isolated-gate InAs/AlSb high electron mobility transistors (Sb-HEMTs) has been studied and …
Small-signal modeling with direct parameter extraction for impact ionization effect in high-electron-mobility transistors
H Guan, H Lv, H Guo, Y Zhang - Journal of Applied Physics, 2015 - pubs.aip.org
Impact ionization affects the radio-frequency (RF) behavior of high-electron-mobility
transistors (HEMTs), which have narrow-bandgap semiconductor channels, and this …
transistors (HEMTs), which have narrow-bandgap semiconductor channels, and this …
[图书][B] Ultra-low power InAs/AlSb HEMTs for cryogenic low-noise applications
G Moschetti - 2012 - search.proquest.com
Abstract The InAs/AlSb high electron mobility transistor (HEMT) is an emerging microwave
device technology for ultra-low power and low noise applications. Due to the low bandgap …
device technology for ultra-low power and low noise applications. Due to the low bandgap …
An optimized fitting function with least square approximation in InAs/AlSb HFET small-signal model for characterizing the frequency dependency of impact ionization …
H Guan, H Guo - Chinese Physics B, 2017 - iopscience.iop.org
An enhanced small-signal model is introduced to model the influence of the impact
ionization effect on the performance of InAs/AlSb HFET, in which an optimized fitting function …
ionization effect on the performance of InAs/AlSb HFET, in which an optimized fitting function …
Improved modeling on the RF behavior of InAs/AlSb HEMTs
H Guan, H Lv, Y Zhang, Y Zhang - Solid-State Electronics, 2015 - Elsevier
The leakage current and the impact ionization effect causes a drawback for the performance
of InAs/AlSb HEMTs due to the InAs channel with a very narrow band gap of 0.35 eV. In this …
of InAs/AlSb HEMTs due to the InAs channel with a very narrow band gap of 0.35 eV. In this …