Crystal growth far from thermodynamic equilibrium is nothing but homoepitaxy-thin film
growth on a crystalline substrate of the same material. Because of the absence of misfit …

When collimated beams of low energy ions are used to bombard materials, the surface often
develops a periodic pattern or “ripple” structure. Different types of patterns are observed to …

Surface etching by ion sputtering can be used to pattern surfaces. Recent studies using the
high-spatial-resolution capability of the scanning tunnelling microscope revealed in fact that …

The topography evolution of simultaneously rotated and Ar+ ion sputtered InP surfaces was
studied using scanning force microscopy. For certain sputter conditions, the formation of a …

Spectroscopic light scattering was used to monitor periodic ripple evolution on Si (001) in
situ during Ar+ sputtering. Analysis indicates that under high flux the concentration of mobile …

Plasmonics is the description of specific light matter interactions of metallic structures. In
general the size of such structures is well in the nanometer regime and also determines …

Surface morphology of a Cu (110) crystal, generated by ion sputtering, has been
investigated by scanning tunneling microscopy. Different from recent theoretical predictions …

Stress in thin films and heterostructures is often the cause for malfunction of respective
applications, but enables also the controlled engineering of novel materials properties. In …

The bombardment of surfaces with low-energy ion beams leads to material erosion and can
be accompanied by changes in the topography. Under certain conditions this surface …

The evolution of the Cu (110) surface morphology during low temperature (180 K) ion
sputtering was studied as a function of the incident ion beam angle θ by means of scanning …