We discuss the design, realization and experimental characterization of a GaN-based hybrid
Doherty power amplifier for wideband operation in the 3-3.6-GHz frequency range. The …

In this paper, a Doherty power amplifier for K-band point-to-point microwave radio,
developed in TriQuint GaAs 0.15-μm PWR pHEMT monolithic technology, is presented …

A novel methodology for the characterization of the nonlinear dynamic behavior of electron
devices (EDs) is presented. It is based on a complete and accurate ED characterization that …

The term waveform engineering denotes all those circuit design techniques that are based
on shaping the transistor voltage and current waveforms. From a general perspective, these …

Sintering of Ag nanoparticle (NP)-based inkjet printed tracks is a crucial process for the next-
generation digitally printed electronics. In particular, while the digital printing, as additive …

This paper presents a novel approach to the identification of output power and efficiency
contours in microwave power transistors in compressed regime. The formulation is based on …

The characterization of microwave devices under nonlinear conditions is fundamental for
device technology development, to improve device large signal model accuracy and …

Design and characterization of a 7 GHz MMIC GaN Doherty Power Amplifier on TriQuint
technology are presented. To the best of the authors' knowledge, the present circuit, suitable …

In this paper, the design and characterization of a GaN HEMT based class-AB power
amplifier (PA) operating in LTE communication band (1.9-2.5 GHz) are presented. A model …

In this paper, a theoretical investigation of the causes of the AM/PM distortion in Doherty
Power Amplifiers is presented for the first time. The distortion sources are identified and a …