Diamond p-FETs using two-dimensional hole gas for high frequency and high voltage complementary circuits
H Kawarada - Journal of Physics D: Applied Physics, 2022 - iopscience.iop.org
Diamond is a wide bandgap semiconductor (bandgap: 5.5 eV). However, through impurity
doping, diamond can become a p-type or n-type semiconductor. The minimum resistivity of p …
doping, diamond can become a p-type or n-type semiconductor. The minimum resistivity of p …
Large-signal modelling and comparison of AlGaN/GaN HEMTs and SiC MESFETs
The Large Signal (LS) model for GaN and SiC FET devices was developed and evaluated
with DC, S, and LS measurements. Special attention was paid to improve the management …
with DC, S, and LS measurements. Special attention was paid to improve the management …
High Output Power Density of 2DHG Diamond MOSFETs With Thick ALD-Al2O3
K Kudara, S Imanishi, A Hiraiwa… - … on Electron Devices, 2021 - ieeexplore.ieee.org
This article reports on the high operation voltage large-signal performance of two-
dimensional hole gas diamond metal-oxide semiconductor field-effect transistors …
dimensional hole gas diamond metal-oxide semiconductor field-effect transistors …
Revealing the adhesion, stability, and electronic structure of SiC/M (M= Au, Pt) interface: A first-principles study
W Wu, Y Lu, J Xu, Y Li, C Wu, J Jiang, W Yang - Vacuum, 2023 - Elsevier
The interface bonding and electronic properties between SiC and metal are the key factors
affecting the physical transport phenomena of metal-semiconductor field-effect transistors …
affecting the physical transport phenomena of metal-semiconductor field-effect transistors …
A novel 4H–SiC MESFET with P-type doping zone and recessed buffer layer
H Jia, Y Zhang, S Zhu, H Wang, X Wang… - Materials Science in …, 2022 - Elsevier
Based on the double recessed 4H–SiC metal semiconductor field effect transistor (DR-
MESFET) structure, a new 4H–SiC MESFET with p-type doping zone in drain drift region and …
MESFET) structure, a new 4H–SiC MESFET with p-type doping zone in drain drift region and …
An SiC MESFET-based MMIC process
M Sudow, K Andersson, N Billstrom… - IEEE transactions on …, 2006 - ieeexplore.ieee.org
A monolithic microwave integrated circuit (MMIC) process based on an in-house SiC
MESFET technology has been developed. The process uses microstrip technology, and a …
MESFET technology has been developed. The process uses microstrip technology, and a …
An improved model for current voltage characteristics of submicron SiC MESFETs
This paper presents an improved model to simulate IV characteristics of submicron SiC
MESFETs, designed for microwave power applications. The proposed model adequately …
MESFETs, designed for microwave power applications. The proposed model adequately …
Transient simulation of microwave SiC MESFETs with improved trap models
H Hjelmgren, F Allerstam, K Andersson… - IEEE transactions on …, 2010 - ieeexplore.ieee.org
Measured and simulated transient characteristics of a SiC metal-semiconductor field-effect
transistor are compared. Self-heating, gate tunneling, substrate, and surface traps are taken …
transistor are compared. Self-heating, gate tunneling, substrate, and surface traps are taken …
Observation of a two dimensional electron gas formed in a polarization doped C-face 3C∕ 4H SiC heteropolytype junction
MVS Chandrashekhar, CI Thomas, J Lu… - Applied Physics …, 2007 - pubs.aip.org
A two dimensional electron gas (2DEG) was observed in a C-face 3 C∕ 4 H SiC
heteropolytype junction. Sheet carrier concentrations of∼ 3× 10 13 cm− 2 and Hall mobility …
heteropolytype junction. Sheet carrier concentrations of∼ 3× 10 13 cm− 2 and Hall mobility …
A novel 4H–SiC MESFET with recessed gate and channel
New structures named as recessed gate and channel (RGC) silicon carbide (SiC) based
metal semiconductor field effect transistors (MESFETs) are reported in this paper, in which …
metal semiconductor field effect transistors (MESFETs) are reported in this paper, in which …