In this work, a carbon nanotube junctionless tunnel field-effect transistor has been proposed
and investigated. The presented structure uses two isolated gates with the same work …

This work has provided an efficient technique to improve the electrical performance for the
Graphene Nanoribbon Field Effect Transistors (GNRFETs) successfully. The physical gate …

Tunneling field-effect transistor (TFET) suffers from ultra-sharp doping concentration
gradients in both the source/channel junction and drain/channel junction. Recently, the …

This article introduces a novel label-free deoxyribonucleic acid (DNA) nanosensor based on
a coaxially gated junctionless carbon nanotube field-effect transistor (JL CNTFET). The …

In this paper, a new structure using dual junctions in the source and drain regions is
proposed to improve the electronic characteristics of the doping less carbon nanotube FET …

The present paper introduces a metal-oxide-semiconductor graphene nanoribbon field-
effect transistor (MOS-GNRFET), in which heterogeneous gates with different work functions …

In this paper, a tunneling graphene nanoribbon field effect transistor with electrically
activated drain extension, namely, EA-T-GNRFET, is proposed. The proposed structure …

In this paper a heterostructure tunneling carbon nanotube field-effect transistor, namely HT-
CNTFET, is introduced. In the proposed structure, a carbon nanotube with a different chirality …

By applying% 3 compressive local uniaxial strain on 2.5 nm of source and 2.5 nm of channel
regions of tunneling graphene nanoribbon field-effect transistor (T-GNRFET), we propose a …

This paper introduces a groundbreaking framework that establishes a cohesive link between
first principles-based simulations and circuit-level analyses using a machine learning-based …