Noise due to the avalanche multiplication of charge carriers is the major limiting factor for
determining the high frequency properties of impact avalanche transit time (IMPATT) …

Through this paper, the effects of acoustic phonons on the noise performance of avalanche
transit-time devices have been investigated and reported. For this study, a double-drift …

Noise performance of different structures of Si~ Si1− xGex anisotype heterojunction double‐
drift region (DDR) mixed tunneling and avalanche transit time (MITATT) devices has been …

Simulation studies are made on the large-signal RF performance and avalanche noise
properties of heterojunction double-drift region (DDR) impact avalanche transit time …

The influence of inter-carrier scattering phenomena on the noise performance of double-drift
region (DDR) impact avalanche transit time diodes has been investigated. Three optimized …

In this paper, the authors have made an attempt to study the effect of photo-irradiation on the
avalanche noise properties of double-drift region (DDR) mixed tunnelling and avalanche …

The effect of magnetic field on the noise performance of the magnetic field tunable
avalanche transit time (MAGTATT) device based on Si, designed to operate at W-band (75 …

A major amount of energy of mobile electrons and holes in a semiconductor under electric
field are lost due to inter-carrier collisions prior to ionising collision. This fact causes a …

Noise properties and performance of DDR IMPATT diode at Ka Band frequency has been
investigated through modeling and simulation technique. An iterative method has been used …

The authors have made an attempt to study the millimeter-wave properties and noise
performance of Si~ Si 1-x Ge x anisotype heterojunction Double-Drift Region (DDR) Mixed …