ABSTRACT PCMs are Non-Volatile Memories (NVMs) that store data using phase-change
semiconductors, such as silicon-chalcogenide glass. In addition to increased integration …

Editor's note: Phase change memory, spin-transfer torque random access memory, and
resistive random access memory are three major emerging memory technologies that …

Reducing write data to encrypted Non-Volatile Main Memory (NVMM) can directly improve
NVMM's endurance, performance, and energy efficiency. However, existing works that …

As technology process node scales down, on-chip SRAM caches lose their efficiency
because of their low scalability, high leakage power, and increasing rate of soft errors …

Spin-transfer torque magnetic RAM (STT-MRAM) is known as the most promising
replacement for static random access memory (SRAM) technology in large last-level cache …

Modern computer systems expend significant amounts of energy on transmitting data over
long and highly capacitive interconnects. A promising way of reducing the data movement …

Emerging Resistive Random Access Memory (ReRAM) is a promising candidate as the
replacement for DRAM due to its low standby power, high density, high scalability, and …

Byte-addressable non-volatile memory (NVM) is emerging as an alternative for main
memory. Non-volatile main memory (NVMM) systems are required to support atomic …

Emerging Non-Volatile Memories (NVMs) such as Phase Change Memory (PCM) and
Resistive RAM (RRAM) are promising to replace traditional DRAM technology. However …

High static power consumption and insufficient scalability of the commonly used DRAM main
memory technology appear to be tough challenges in upcoming years. Hence, adopting …