Lift-off processes have been developed as the enabling technology to free the epitaxial III-
nitride thin film from a conventional growth substrate such as sapphire and silicon in order to …

The rapidly developing III-nitrides materials and devices technologies are driving the
advancements in hybrid heterogeneous structures for multi-material and multifunctional …

A femtosecond laser focused inside bulk GaN was used to slice a thin GaN film with an
epitaxial device structure from a bulk GaN substrate. The demonstrated laser slicing lift-off …

Crystallization of GaN by the HVPE technique on an MOCVD-GaN/sapphire template with
photo-lithographically patterned Ti mask and ammonothermally-grown GaN crystals (Am …

Results of GaN growth from gallium solution under high nitrogen pressure are presented.
Basic of the high nitrogen pressure solution (HNPS) growth method is described. A new …

Due to the remarkable growth rate compared to another growth methods for gallium nitride
(GaN) growth, hydride vapor phase epitaxy (HVPE) is now the only method for mass product …

In this work homoepitaxial HVPE-GaN growth on non-polar and semi-polar GaN seeds was
described. Two crystallization processes, in the same experimental conditions but using …

Hydride vapor phase epitaxy (HVPE) was part of the very first vapor phase epitaxy
processes developed for the growth of III–V semiconductor layers. HVPE's features—the …

Crystallization of GaN by hydride vapor phase epitaxy (HVPE) on ammonothermally grown
GaN seed crystals is overviewed. Morphology of the crystal growing surface at the beginning …

An hydride vapor‐phase epitaxy reactor for the growth of bulk GaN crystals with a diameter
of 50 mm is developed. Growth rate nonuniformity of 1% is achieved using an axisymmetric …