Major features of silicon carbide (SiC) power devices include high blocking voltage, low on-
state loss, and fast switching, compared with those of the Si counterparts. Through recent …

This paper gives an overview on some state-of-the-art characterization methods of SiO2/4H-
SiC interfaces in metal oxide semiconductor field effect transistors (MOSFETs). In particular …

Power and RF electronics applications have spurred massive investment into a range of
wide and ultrawide bandgap semiconductor devices which can switch large currents and …

Silicon carbide (SiC) is the most mature wide band-gap semiconductor and is currently
employed for the fabrication of high-efficiency power electronic devices, such as diodes and …

With the advancement of artificial intelligence technology, more and more biological
functions need to be imitated to complete more complex tasks and adapt to a complex …

Wide band gap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) are
excellent materials for the next generation of high-power and high-frequency electronic …

As the wide band-gap semiconductor materials, single crystal diamond, SiC, GaN are the
key in semiconductor fields. Due to the high hardness, high brittleness and strong chemical …

This paper proposes a charge-to-breakdown (Q BD) approach for SiC/SiO 2 dielectric
lifetime extraction. The current through the dielectric is shown to be a combination of Fowler …

Following the introduction of metamorphic high electron mobility transistors (MHEMTs) 30
years back, there has been a rapid growth in their use in advanced MMIC (monolithic …

The effects of a process that minimizes oxidation of SiC on the channel mobility of heavily
doped 4H-SiC (0001),(11 bar 2 0) and (1 bar 1 00) metal-oxide-semiconductor field-effect …