Ferromagnetism of ZnO and GaN: a review

C Liu, F Yun, H Morkoc - Journal of Materials Science: Materials in …, 2005 - Springer
The observation of ferromagnetism in magnetic ion doped II–VI diluted magnetic
semiconductors (DMSs) and oxides, and later in (Ga, Mn) As materials has inspired a great …

Basic ammonothermal growth of Gallium Nitride–State of the art, challenges, perspectives

M Zajac, R Kucharski, K Grabianska… - Progress in Crystal …, 2018 - Elsevier
Recent progress in ammonothermal technology of bulk GaN growth in basic environment is
presented and discussed in this paper. This method enables growth of two-inch in diameter …

[图书][B] Handbook of nitride semiconductors and devices, Materials Properties, Physics and Growth

H Morkoį - 2009 - books.google.com
The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …

Ferromagnetic nitride-based semiconductors doped with transition metals and rare earths

A Bonanni - Semiconductor Science and Technology, 2007 - iopscience.iop.org
This review summarizes the state-of-the-art in the search for room temperature
ferromagnetic semiconductors based on transition-metal-and rare-earth-doped nitrides. The …

Zinc oxide for electronic, photovoltaic and optoelectronic applications

M Godlewski, E Guziewicz, K Kopalko, G Łuka… - Low Temperature …, 2011 - pubs.aip.org
We show that the atomic layer deposition (ALD) technique has great potential for
widespread use in the production of ZnO films for applications in electronic, photovoltaic …

Optical properties of III-Mn-V ferromagnetic semiconductors

KS Burch, DD Awschalom, DN Basov - Journal of Magnetism and Magnetic …, 2008 - Elsevier
We review the first decade of extensive optical studies of ferromagnetic, III-Mn-V diluted
magnetic semiconductors. Mn introduces holes and local moments to the III–V host, which …

Development of new materials for spintronics

J Cibert, JF Bobo, U Lüders - Comptes …, 2005 - comptes-rendus.academie-sciences …
Nous présentons ici une revue de l'état de l'art actuel en matière de recherche fondamentale
sur les matériaux pour la spintronique. L'article est essentiellement dédié aux matériaux …

Structural and paramagnetic properties of dilute

W Stefanowicz, D Sztenkiel, B Faina, A Grois… - Physical Review B …, 2010 - APS
Systematic investigations of the structural and magnetic properties of single crystal Ga 1− x
Mn x N films grown by metal organic vapor phase epitaxy are presented. High-resolution …

Hole states in wide band-gap diluted magnetic semiconductors and oxides

T Dietl - Physical Review B—Condensed Matter and Materials …, 2008 - APS
Puzzling disagreement between photoemission and optical findings in magnetically doped
GaN and ZnO is explained within a generalized alloy theory. The strong coupling between …

X-ray absorption near-edge structure and valence state of Mn in (Ga, Mn) N

A Titov, X Biquard, D Halley, S Kuroda… - Physical Review B …, 2005 - APS
The band structure of the diluted magnetic semiconductor (Ga, Mn) N, and the x-ray
absorption near-edge structure (XANES) at the K edge of Mn, were calculated using the …