High‐Temporal‐Resolution Characterization Reveals Outstanding Random Telegraph Noise and the Origin of Dielectric Breakdown in h‐BN Memristors
Memristor‐based electronic memory have recently started commercialization, although its
market size is small (~ 0.5%). Multiple studies claim their potential for hardware …
market size is small (~ 0.5%). Multiple studies claim their potential for hardware …
Random Telegraph Noise in Metal‐Oxide Memristors for True Random Number Generators: A Materials Study
Some memristors with metal/insulator/metal (MIM) structure have exhibited random
telegraph noise (RTN) current signals, which makes them ideal to build true random number …
telegraph noise (RTN) current signals, which makes them ideal to build true random number …
Hardware implementation of a true random number generator integrating a hexagonal boron nitride memristor with a commercial microcontroller
The development of the internet-of-things requires cheap, light, small and reliable true
random number generator (TRNG) circuits to encrypt the data—generated by objects or …
random number generator (TRNG) circuits to encrypt the data—generated by objects or …
Comprehensive numerical modeling of filamentary RRAM devices including voltage ramp-rate and cycle-to-cycle variations
The equilibrium ON and OFF states of resistive random access memory (RRAM) are due to
formation and destruction of a conducting filament. The laws of thermodynamics dictate that …
formation and destruction of a conducting filament. The laws of thermodynamics dictate that …
Thermodynamics of phase transitions and bipolar filamentary switching in resistive random-access memory
We present a phenomenological theory of bipolar filamentary resistive random-access
memory describing the commonly observed features of their current-voltage characteristics …
memory describing the commonly observed features of their current-voltage characteristics …
Influence of oxygen ion elementary diffusion jumps on the electron current through the conductive filament in yttria stabilized zirconia nanometer-sized memristor
AV Yakimov, DO Filatov, ON Gorshkov… - Chaos, Solitons & …, 2021 - Elsevier
The structure of the electron current through an individual filament of a nanometer-sized
virtual memristor consisting of a contact of a conductive atomic force microscope probe to an …
virtual memristor consisting of a contact of a conductive atomic force microscope probe to an …
Investigation of Filamentary Current Fluctuations Features in the High-Resistance State of Ni/HfO2-Based RRAM
MB Gonzalez, J Martin-Martinez… - … on Electron Devices, 2016 - ieeexplore.ieee.org
In this paper, the presence of filamentary current instabilities in the high resistance state of
Ni/HfO 2-based RRAM devices and their associated current fluctuations mechanisms are …
Ni/HfO 2-based RRAM devices and their associated current fluctuations mechanisms are …
Correlation analysis between the current fluctuation characteristics and the conductive filament morphology of HfO2-based memristor
Y Li, KS Yin, MY Zhang, L Cheng, K Lu… - Applied Physics …, 2017 - pubs.aip.org
Memristors are attracting considerable interest for their prospective applications in
nonvolatile memory, neuromorphic computing, and in-memory computing. However, the …
nonvolatile memory, neuromorphic computing, and in-memory computing. However, the …
Electrical characterization of Random Telegraph Noise in Fully-Depleted Silicon-On-Insulator MOSFETs under extended temperature range and back-bias operation
Abstract Random Telegraph Noise (RTN) has been studied in Ultra-Thin Fully-Depleted
Silicon-On-Insulator transistors. A modified Time Lag Plot algorithm has been used to …
Silicon-On-Insulator transistors. A modified Time Lag Plot algorithm has been used to …
Semi-automated extraction of the distribution of single defects for nMOS transistors
Miniaturization of metal-oxide-semiconductor field effect transistors (MOSFETs) is typically
beneficial for their operating characteristics, such as switching speed and power …
beneficial for their operating characteristics, such as switching speed and power …