The present disclosure relates to a Gallium-Nitride (GaN) based module, which includes a
module substrate, a thinned switch die residing over the module substrate, a first mold …

The present disclosure relates to a radio frequency device that includes a transfer device die
and a multilayer redistribution structure underneath the transfer device die. The transfer …

Among other things, a method of fabricating an integrated electronic device package is
described. First trace portions of an electrically conductive trace are formed on an electri …

A semiconductor package structure is provided. The semiconductor package structure
includes a semiconductor die surrounded by a first molding compound layer. A redistribution …

A method of manufacturing a semiconductor device is provided. The method includes
forming an assembly including placing a semiconductor die and a launcher structure on a …

The present disclosure relates to a microelectronics package with a vertically stacked
structure of a microelectromechanical systems (MEMS) device and a controller device. The …

2021-03-12 Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
reassignment TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD …

A method of forming a semiconductor package structure includes providing a first wafer-level
package structure having a die region surrounded by a scribe line region. The first wafer …

The present disclosure relates to a radio frequency device that includes a transfer device die
and a multilayer redistribution structure underneath the transfer device die. The transfer …

Semiconductor packages and methods of forming the same are provided. One of the
semiconductor package includes a first die, a dummy die, a first redistribution layer structure …