Vertical β-Ga₂O₃ Power Transistors: A Review
MH Wong, M Higashiwaki - IEEE Transactions on Electron …, 2020 - ieeexplore.ieee.org
With projected performance advantages over silicon and incumbent wide-bandgap
compound semiconductors, gallium oxide (Ga 2 O 3) has garnered worldwide attention as …
compound semiconductors, gallium oxide (Ga 2 O 3) has garnered worldwide attention as …
Field-Plated Ga2O3 Trench Schottky Barrier Diodes With a BV2/ of up to 0.95 GW/cm2
We report the realization of field-plated vertical Ga 2 O 3 trench Schottky barrier diodes
(SBDs). The trench SBDs show significantly lower leakage current than regular SBDs. With …
(SBDs). The trench SBDs show significantly lower leakage current than regular SBDs. With …
Field-Plated Lateral Ga2O3 MOSFETs With Polymer Passivation and 8.03 kV Breakdown Voltage
This letter reports the polymer passivation of field plated lateral β-Ga 2 O 3 MOSFETs with
significant improvement in the breakdown voltages as compared to non-passivated devices …
significant improvement in the breakdown voltages as compared to non-passivated devices …
Demonstration of the p-NiOx/n-Ga2O3 Heterojunction Gate FETs and Diodes With BV2/Ron,sp Figures of Merit of 0.39 GW/cm2 and 1.38 GW/cm2
We report on achieving high-performance β-Ga 2 O 3 power devices through the
incorporation of the p-type NiO x. β-Ga 2 O 3 pn heterojunction (HJ) diodes, as well as the …
incorporation of the p-type NiO x. β-Ga 2 O 3 pn heterojunction (HJ) diodes, as well as the …
β-(Al0.18Ga0.82)2O3/Ga2O3 Double Heterojunction Transistor With Average Field of 5.5 MV/cm
Maintaining high average fields between the gate and drain is imperative in achieving near
theoretical performance in ultra-wide band gap semiconductors like β-Ga 2 O 3. In this letter …
theoretical performance in ultra-wide band gap semiconductors like β-Ga 2 O 3. In this letter …
10-kV Ga2O3 Charge-Balance Schottky Rectifier Operational at 200 °C
This work demonstrates a lateral Ga2O3 Schottky barrier diode (SBD) with a breakdown
voltage (BV) over 10 kV, the highest BV reported in Ga2O3 devices to date. The 10 kV SBD …
voltage (BV) over 10 kV, the highest BV reported in Ga2O3 devices to date. The 10 kV SBD …
Multi-kV Class β-Ga₂O₃ MESFETs With a Lateral Figure of Merit Up to 355 MW/cm²
We demonstrate over 3 kV gate-pad-connected field plated (GPFP) β-Ga 2 O 3 lateral
MESFETs with high lateral figures of merit (LFOM) using metalorganic vapor phase epitaxy …
MESFETs with high lateral figures of merit (LFOM) using metalorganic vapor phase epitaxy …
Lateral β-Ga2O3 MOSFETs With High Power Figure of Merit of 277 MW/cm2
Y Lv, H Liu, X Zhou, Y Wang, X Song… - IEEE Electron …, 2020 - ieeexplore.ieee.org
In this work, we have demonstrated highperformance lateral β-Ga 2 O 3 metal-oxide-
semiconductor field-effect transistors (MOSFETs) with state-of-art power figure-of-merit (P …
semiconductor field-effect transistors (MOSFETs) with state-of-art power figure-of-merit (P …
Vacuum Annealed β-Ga2O3 Recess Channel MOSFETs With 8.56 kV Breakdown Voltage
S Sharma, L Meng, AFMAU Bhuiyan… - IEEE Electron …, 2022 - ieeexplore.ieee.org
This letter reports vacuum annealing of lateral field-plated-Ga2O3 MOSFETs with significant
current recovery and improvement in the on-state resistance,, after Reactive Ion Etching …
current recovery and improvement in the on-state resistance,, after Reactive Ion Etching …
High-Mobility Tri-Gate β-Ga2O3 MESFETs With a Power Figure of Merit Over 0.9 GW/cm2
In this letter, fin-shape tri-gate-Ga2O3 lateral MESFETs are demonstrated with a high power
figure of merit (PFOM) of 0.95 GW/cm2–a record high for any-Ga2O3 transistor to date. A low …
figure of merit (PFOM) of 0.95 GW/cm2–a record high for any-Ga2O3 transistor to date. A low …