(57) ABSTRACT A semiconductor component has a plurality of GaN-based layers, which are
preferably used to generate radiation, pro duced in a fabrication process. In the process, the …

The present disclosure relates to a semiconductor light emitting device, comprising: a
plurality of semiconductor layers, including an active layer, generating light via elec tron …

It is an object of the present invention to provide a highly reliable and high-quality
semiconductor element by effectively preventing the migration of silver to a nitride …

Disclosed is a semiconductor light emitting device, including: a plurality of semiconductor
layers grown sequentially on a growth substrate; a first electrode part, which is in electrical …

(57) ABSTRACT A method for fabricating a Light Emitting Diode (LED) with increased light
extraction efficiency, comprising providing a III-Nitride based LED structure comprising a …

(57) ABSTRACT A blue LED device has a transparent substrate and a reflector structure
disposed on the backside of the substrate. The reflector structure includes a Distributed …

I-4 atano et al. 5,468,678 A 1 1/1995 Nakamura et al. active layer includes one or more V-
pits. A portion of the 5,563,422 A 10/1996 Nakamura et al. p-type Group III-V semiconductor …

A light-emitting diode chip (1) comprises a GaN-based, radiation-emitting epitaxial layer
sequence (3), an active region (19), an n-doped layer (4) and a p-doped layer (5). The p …

The present disclosure relates to a method of manufacturing a semiconductor light emitting
device, comprising: forming a finger electrode in electrical communication with a second …

A device including a first semiconductor layer and a contact to the first semiconductor layer
is disclosed. An interface between the first semiconductor layer and the contact includes a …