This paper presents the impact of a short-circuit event on the gate reliability in planar SiC
MOSFETs, which becomes more critical with increased junction temperature and higher bias …

Junction temperature sensing is an integral part of both on-line and off-line condition
monitoring where direct access the bare die surface is not available. Given a defined power …

Silicon Carbide (SiC) power transistors are more and more used in electric energy
conversion systems. SiC power semiconductors devices, such as SiC metal-oxide …

In this paper, the reliability performance of 1.2-kV silicon carbide (SiC) power mosfet
modules is investigated through the combination of both accelerated power-cycling tests …

The rising demand for increased integration and higher power outputs poses a hidden risk
to the long-term reliable operation of third-generation semiconductors. Thus, the power …

The chip-level degradation and packaging-level degradation of SiC MOSFET coupled and
affected each other in the degradation process of the power cycling test (PCT). The …

Silicon carbide (SiC), as one of the most favorite wide band gap semiconductor materials, is
often applied in power electronics nowadays. The reliability of SiC packages, however …

Higher maximum junction temperature operation requires higher power cycling reliability
especially for silicon carbide power modules. In this work, with the help of a novel sintered …

This paper provides an insight into the impact of aging-related parameter drift in the
operation of a 1.2 kV discrete SiC power MOSFET in a TO-247-4 package. First, the on-state …

A measurement setup for health and wear-out monitoring via electrical parameters is
implemented in a test bench to allow online parameter observation during inverter operation …