Scalability of voltage-controlled filamentary and nanometallic resistance memory devices
Much effort has been devoted to device and materials engineering to realize nanoscale
resistance random access memory (RRAM) for practical applications, but a rational physical …
resistance random access memory (RRAM) for practical applications, but a rational physical …
Nanofilament dynamics in resistance memory: Model and validation
Filamentary resistive random-access memory (ReRAM) employs a single nanoscale event
to trigger a macroscopic state change. While fundamentally it involves a gradual …
to trigger a macroscopic state change. While fundamentally it involves a gradual …
Purely electronic nanometallic resistance switching random-access memory
Resistance switching random-access memory (ReRAM), with the ability to repeatedly
modulate electrical resistance, has been highlighted as a feasible high-density memory with …
modulate electrical resistance, has been highlighted as a feasible high-density memory with …
Resolving voltage–time dilemma using an atomic-scale lever of subpicosecond electron–phonon interaction
Nanoelectronic memory based on trapped charge need to be small and fast, but
fundamentally it faces a voltage–time dilemma because the requirement of a high-energy …
fundamentally it faces a voltage–time dilemma because the requirement of a high-energy …
Demonstration of Ultra‐Fast Switching in Nanometallic Resistive Switching Memory Devices
X Yang - Journal of Nanoscience, 2016 - Wiley Online Library
Interdependency of switching voltage and time creates a dilemma/obstacle for most resistive
switching memories, which indicates low switching voltage and ultra‐fast switching time …
switching memories, which indicates low switching voltage and ultra‐fast switching time …
Distinguishing uniform switching from filamentary switching in resistance memory using a fracture test
Resistance random access memory (RRAM) is a rapidly developing emergent
nanotechnology. For practical applications and basic understanding, it is important to …
nanotechnology. For practical applications and basic understanding, it is important to …
[HTML][HTML] Tuning resistance states by thickness control in an electroforming-free nanometallic complementary resistance random access memory
Tuning low resistance state is crucial for resistance random access memory (RRAM) that
aims to achieve optimal read margin and design flexibility. By back-to-back stacking two …
aims to achieve optimal read margin and design flexibility. By back-to-back stacking two …
[图书][B] Quantum Electronic Interference in Nano Amorphous Silicon and Other Thin Film Resistance Memory
Y Lu - 2017 - search.proquest.com
This thesis describes conductivity in amorphous semiconductors and insulators—some
doped with metals, in which elastic electrons can random walk across a transport length of …
doped with metals, in which elastic electrons can random walk across a transport length of …
Conducting Electrons in Amorphous Si Nanostructures: Coherent Interference and Metal-Insulator Transitions Mediated by Local Structures
Without a periodic reference framework, local structures in noncrystalline solids are difficult
to specify, but they still exert an enormous influence on materials properties. For example …
to specify, but they still exert an enormous influence on materials properties. For example …
Focus ion beam-induced mechanical stress switching in an ultra-fast resistive switching device
X Yang - Applied Physics A, 2016 - Springer
Abstract The Mo/Si 3 N 4: Pt/Pt nanometallic resistive switching devices with ultra-fast
write/erase speed (< 50 ns) were fabricated. Other than conventional electrical switching, a …
write/erase speed (< 50 ns) were fabricated. Other than conventional electrical switching, a …