A virtual world has now become a reality as augmented reality (AR) and virtual reality (VR)
technology become commercially available. Similar to how humans interact with the …

GaN-based light-emitting devices have the potential to realize all visible emissions with the
same material system. These emitters are expected to be next-generation red, green, and …

A high efficiency, high brightness, and robust micro or sub-microscale red light emitting
diode (LED) is an essential, yet missing, component of the emerging virtual reality and future …

We have demonstrated full-color and white-color micro light-emitting diodes (μLEDs) using
InGaN/AlGaN core-shell nanowire heterostructures, grown on silicon substrate by molecular …

With the advent of technologies such as augmented/virtual reality (AR/VR) that are moving
towards displays with high efficiency, small size, and ultrahigh resolution, the development …

We investigated the effects of size on electrical and optical properties of InGaN-based red
light-emitting diodes (LEDs) by designing rectangular chips with different mesa lengths …

Gallium nitride (GaN) nanowire (NW) light emitting diodes (LEDs) are promising candidates
for microdisplay applications due to smaller dimensions and potential for novel integration …

Fabrication of indium tin oxide (ITO) was optimized for InGaN-based amber/red light-emitting
diodes (LEDs). A radiofrequency sputtering reduced the sheet resistivity of ITO at low …

GaN nanostructures are promising for a broad range of applications due to their 3D
structure, thereby exposing non-polar crystal surfaces. The nature of the exposed crystal …

There have been recent research advances in AlGaN-based self-assembled nanowires
(NWs) as building blocks for ultraviolet (UV) optoelectronics grown by plasma-assisted …