Pure and∼ 7.5 at% Zn alloyed β-Ga2O3 epitaxial films were epitaxially grown by metal
organic chemical vapor deposition choosing sapphire (c-plane) as substrates, followed by …

Wide bandgap β-Ga 2 O 3 is an ideal candidate material with broad application prospects
for power electronic components in the future. Aiming at the application requirements of β …

Gallium oxide (Ga2O3) is an ultra-wide bandgap material, which has recently attracted
widespread attention for holding promising applications in power electronics and solar blind …

V impurities were intentionally introduced into β-Ga 2 O 3 crystals as n-type dopants to
improve the n-type conductivity of single-crystal substrates. A high-quality 0.20 mol% V …

In this study, the effects of annealing on the surface residual impurities and intrinsic defects
of unintentionally doped (UID) β-Ga2O3 are investigated by adopting high-temperature …

Abstract Integrating two-dimensional (2D) layered materials with wide bandgap β-Ga2O3
has unveiled impressive opportunities for exploring novel physics and device concepts. This …

Abstract Two-dimensional (2D) conformal SnO 2-Ga 2 O 3 np heterostructures were
fabricated on a wafer scale for the first time by atomic layer deposition (ALD) technique and …

Beta-phase gallium oxide (β-Ga 2 O 3) with a monoclinic lattice structure is a research
hotspot in the field of ultra-wide bandgap semiconductors in the world and displays …

The contribution of oxygen vacancies (⁠ VO⁠) to the electrical conductivity of unintentionally
doped β-Ga 2 O 3 has been a topic of recent debate. Here, we use a combination of Hall …

Co‐integration of visible and infrared (IR) photodetection into a simple configuration is of
essential importance for broadband multispectral imaging, and various heterostructures …