Mist chemical vapor deposition (mist CVD) technology originated from early metal organic
chemical vapor deposition (MOCVD) techniques. By mist CVD, High-quality oxide films are …

LiGa 5 O 8 in the spinel type structure is investigated as a potential ultra-wideband-gap
semiconductor. The band structure is determined using the quasiparticle self-consistent GW …

A high‐performance self‐powered deep ultraviolet (DUV) photodetector based on the NiO/β‐
Ga2O3 heterojunction is fabricated and analyzed. The NiO/β‐Ga2O3 heterojunction …

Near-infrared (NIR) spectroscopy has diverse applications across various fields, such as the
detection of food components and pesticide residues, early diagnosis, and treatment of …

Recently, LiGa 5 O 8 was claimed to be a p-type dopable ultrawide-bandgap oxide, based
on measurements of undoped material. Here, the electronic properties of potential acceptor …

LiGa 5 O 8, a recently discovered ultrawide bandgap semiconductor exhibiting p-type
conductivity at room temperature, is grown on (010) β-Ga 2 O 3 substrate. Utilizing a mist …

Traditional fluorescent anti-counterfeiting materials, excited by the near infrared (NIR) or
ultraviolet (UV) light, typically tend to be homochromatic or occasionally bicolor. The …

Recently, LiGa 5 O 8 was identified as a cubic spinel type ultra-wide-bandgap
semiconductor with a gap of about 5.36 eV and reported to be unintentionally p-type. Here …

Crystalline thin films of LiGa 5 O 8 have recently been realized through epitaxial growth via
mist-chemical vapor deposition. The single crystal, spinel cubic LiGa 5 O 8 films show …

Recently, LiGa $ _5 $ O $ _8 $ was identified as a cubic spinel type ultra-wide-band-gap
semiconductor with a gap of about 5.36 eV and reported to be unintentionally p-type. Here …