Long wavelength infrared devices, despite growing interest due to a wide range of
applications in commercial, public, and academic sectors, are still struggling to achieve …

Quantum dot (QD) growth on high ($ c_ {3v} $) symmetry GaAs {111} surfaces holds promise
for efficient entangled photon sources. Unfortunately, homoepitaxy on GaAs {111} surfaces …

We analyzed the growth dynamics during the heteroepitaxy on a GaAs (111) A surface
under an As2 flux. The growth is significantly influenced by the Ehrlich–Schwöbel effect …

We demonstrated nanopit formation by Ga-assisted local droplet etching technique in
InGaAs metamorphic layers grown on vicinal GaAs (111) A substrates. We studied nanopit …

In this work, we present the conception and study of gallium nitride (GaN) nanostructures on
a gallium arsenide (GaAs) substrate with (111) A orientation. The nanostructures were …

Dense arrays of self-assembled nanoholes are fabricated in GaAs (100) surfaces by As-free
oxide cleaning thermal process. The formation of pit-like structures above 500° C occurs by …

We investigate the influence of the In composition x on the surface morphology of In x Ga 1−
x Sb quantum dots (QDs) grown by molecular beam epitaxy. In x Ga 1− x Sb QDs are …

We present the design for a novel type of dual-band photodetector in the thermal infrared
spectral range, the Optically Controlled Dual-band quantum dot Infrared Photodetector …