The multigated architecture of FinFETs appear attractive for continued CMOS scaling with
the addition of discrete fin sizing that brings a new variable into the design. In this paper, a …

In sub-20 nm CMOS technology nodes, the parameter variability has become a main hurdle
during the scaling of devices. Recently, the use of metal gate stacks in nano-scale FinFET …

Electrothermal study of the n-type SOI Fin-FETs at 50-nm node is performed by analytical
method and numerical algorithm. The self-heating effects (SHE) are investigated and …

In this paper, statistical analysis of the static impact of charge traps on the drain current of p-
type metal–oxide–semiconductor field-effect transistors is presented. The study was carried …

Automotive has become one of the most prevailing sectors of the modern semiconductor
industry. Due to strict requirements for safety, reliability, and security the proposed test & …

In aggressively scaled devices, the FinFET technology has become more prone to line edge
roughness (LER) induced threshold voltage variability. As a result, nano scale FinFET …

In this paper we investigate the sensitivity of RTN noise spectra to statistical variability alone
and in combination with variability in the traps properties, such as trap level and trap …

In this paper, the influence of different processes on electron trapping in vertical 3D NAND
macaroni has been investigated. Through slow Id-Vg measurements and RTN analysis, it is …

In this paper, dynamic variability (DV) induced by BTI is deeply investigated in nano-scaled
devices by means of statistical measurements and modeling. The impact of a single charge …

Modulation of the sub-band electron population in the inversion channel of 10-nm planar
fully depleted silicon-on-insulator MOSFETs is evidenced by the bias dependence of …