Analytical modeling and doping optimization for enhanced analog performance in a Ge/Si interfaced nanowire MOSFET
This paper critically investigates the effect of doping on different device characteristics of a
Ge/Si interfaced nanowire MOSFET (GSI-NWM) for analog performance enhancement. The …
Ge/Si interfaced nanowire MOSFET (GSI-NWM) for analog performance enhancement. The …
Magnetic field effect on threshold voltage for ultrathin silicon gate-all-around nanowire field-effect-transistors
H Abdelhamid, AM Anis, ME Aboulwafa, MI Eladawy - Silicon, 2020 - Springer
Gate-all-around silicon nanowire field-effect-transistors (GAA Si NWFETs) received much
interest in nanoscale electronic based systems and sensor applications. In this work, the …
interest in nanoscale electronic based systems and sensor applications. In this work, the …