A reduction of symmetry from C6v to C3v leads to the opening of a band gap in the
otherwise gapless semiconductor graphene. Simple models provide a fairly complete …

Here, several classes of magneto-electric devices, and their possible implementations as
complementary metal-oxide-semiconductor (CMOS) replacements, are discussed. We …

Magnetic proximity effect has only been conclusively observed in ferromagnet-based
systems. We report the observation of anomalous Hall effect and angular-dependent …

Integration of a quantum anomalous Hall insulator with a magnetically ordered material
provides an additional degree of freedom through which the resulting exotic quantum states …

We demonstrate the negative spin Hall magnetoresistance (SMR) observed in
antiferromagnetic Cr 2 O 3/Ta bilayers at low temperature. The SMR signals are changed …

In this paper chromium oxide (Cr 2 O 3) thin films have been prepared onto MgO (0 0 1)
substrate by thermal evaporation method at a pressure of about 1× 10− 4 Pa. The …

As electronic integrated circuits are scaled to ever smaller sizes, they run into the obstacle of
excessive power dissipation. Spintronic devices hold the promise of alleviating this problem …

The interfacial charge transfer between mechanically exfoliated few-layer graphene and Cr
2 O 3 (0001) surfaces has been investigated. Electrostatic force microscopy and Kelvin …

Introducing magnetism in two-dimensional materials is of particular importance for both
fundamental research and practical applications in nanoscale spintronics. Herein, we report …

Abstract From the Cr 2p 3/2 x-ray magnetic circular dichroism signal, there is clear evidence
of interface polarization with overlayers of both Pd and Pt on chromia (Cr 2 O 3). The …